| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10 pcs
|
10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| Storage Temperature | |
| Tape & Reel |
The NXP Semiconductors PBSS5580PA,115 is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor designed for applications requiring efficient power switching. It features a maximum collector-emitter voltage (VCEO) of -80V and a continuous collector current (IC) of -4A, with a peak capability of -5A.
This transistor boasts a low collector-emitter saturation resistance (RCEsat) of 65mΩ at 4A and 200mA base current, contributing to reduced power loss. It is encapsulated in an ultra-thin SOT1061 leadless small outline plastic package, offering a smaller PCB footprint compared to conventional transistors.
Key features include high collector current capability and an exposed heat sink for enhanced thermal and electrical conductivity. The NPN complement is the PBSS4580PA.
Applications for the PBSS5580PA,115 include load switches, battery-driven devices, power management, charging circuits, and power switches for motors and fans.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.16 | $2.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-80 V
SOT1061
-4 A
-80 V
-7 V
-0.6 A
0.5 W