PBSS5540Z115

The PBSS5540Z115 is a PNP power bipolar transistor designed for medium-power switching and amplification applications. It offers a maximum collector-emitter voltage of -40 V and a continuous collector current rating of -5 A, with a peak collector current capability of -10 A. The device features a low collector-emitter saturation resistance of 80 mΩ (typical) and a DC current gain (hFE) of 150 minimum at 2 A, 2 V. With a transition frequency of 120 MHz, it is suitable for high-speed switching circuits. The transistor is housed in a compact SOT-223 (SC-73) surface-mount package with a 4-lead configuration and a 2.3 mm pitch, offering efficient heat dissipation. The maximum power dissipation is 2 W at 25°C ambient temperature, and the junction temperature can reach up to 150°C. This transistor is commonly used in power management, load switching, and driver circuits where space is limited.