BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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1,207 pcs
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1207 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PBSS5540Z is a high-performance PNP bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It offers a low collector-emitter saturation voltage (VCEsat) of up to 0.25 V at 5 A, ensuring efficient power handling.
With a maximum collector-emitter voltage (Vce) of 40 V and a continuous collector current (Ic) of up to 5 A, the PBSS5540Z is suitable for various power management tasks. Its high DC current gain (hFE) of 150 at 1 A and 70 at 5 A contributes to effective signal amplification.
The transistor operates within a wide temperature range and is housed in a surface-mount SOT223 package, facilitating easy integration into compact electronic designs. Its robust construction and reliable performance make it a suitable choice for demanding applications.
The maximum collector-emitter voltage (Vce) for the PBSS5540Z is 40 V.
The continuous collector current (Ic) for the PBSS5540Z is up to 5 A.
The collector-emitter saturation voltage (Vce_sat) is a maximum of 0.25 V when the collector current is 5 A and the base current is -50 mA.
The PBSS5540Z is available in the SOT223 package.
The PBSS5540Z is designed for surface mount installation.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
