PBSS5540X,135 The Nexperia PBSS5540X,135 is a PNP low VCEsat (BISS) transistor in a SOT-89 package. It offers a 40V collector-emitter voltage and 4A collector current capability.
Mfr Part #:

PBSS5540X,135

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS5540X,135 is a PNP low VCEsat (BISS) transistor in a SOT-89 package. It offers a 40V collector-emitter voltage and 4A collector current capability.
Total Stock: 13,020 pcs
$ Price Range: $0.48

PBSS5540X,135 Available from 1 distributor

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PBSS5540X,135 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Saturation Resistance
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Peak Current (Maximum @ single pulse; tp ≤ 1 ms)
Peak Current (Maximum @ single pulse; tp ≤ 10 ms)
Peak Current (Maximum @ δ ≤ 0.2; tp ≤ 10 ms)
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
temperature (Maximum)
voltage (Maximum @ open collector)
voltage (Maximum @ open emitter)

PBSS5540X,135 Description

Short technical summary and product information.

The Nexperia PBSS5540X,135 is a PNP bipolar junction transistor (BJT) designed for low VCEsat applications. It features a maximum collector-emitter voltage (VCEO) of -40V and a continuous collector current (IC) of 4A. The transistor boasts a low collector-emitter saturation voltage (VCEsat) of 375mV at 500mA collector current and 5A base current, contributing to high efficiency and reduced heat generation.

 

This device is housed in a SOT-89 (TO-243AA) surface-mount package, making it suitable for compact designs. Key electrical characteristics include a DC current gain (hFE) of at least 150 at 2A collector current and 2V Vce, and a frequency response up to 60MHz. The maximum power dissipation is rated at 1.6W at 25°C ambient temperature, with an operating junction temperature up to 150°C.

 

Applications for the PBSS5540X,135 include supply line switching circuits, battery management, DC/DC converters, and medium power drivers for components like relays and motors. Its AEC-Q101 qualification indicates suitability for automotive and demanding environments.

PBSS5540X,135 Quick Information

Product Type: PNP Transistor
Canonical Name: PBSS5540X,135 PNP Low VCEsat Transistor
Subcategory: Single

PBSS5540X,135 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS5540X,135 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS5540X,135 Features

  • PNP low VCEsat (BISS) transistor.
  • 40 V collector-emitter voltage rating.
  • 4 A continuous collector current.
  • Low saturation voltage for efficiency.
  • SOT-89 surface-mount package.

PBSS5540X,135 Applications

  • Used in supply line switching circuits.
  • Suitable for battery management applications.
  • Applied in DC/DC converter circuits.
  • Can drive medium power loads.
  • Qualified for automotive applications.

PBSS5540X,135 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PBSS5540X,135?

The maximum collector-emitter voltage (VCEO) for the PBSS5540X,135 is -40 V.

What is the continuous collector current rating of the PBSS5540X,135?

The continuous collector current (IC) rating for the PBSS5540X,135 is 4 A.

What is the package type for the PBSS5540X,135 transistor?

The PBSS5540X,135 transistor is supplied in a SOT-89 package.

What is the maximum operating temperature for this transistor?

The maximum operating junction temperature (TJ) for the PBSS5540X,135 is 150°C.

What is the saturation voltage of the PBSS5540X,135 at specified conditions?

The Vce Saturation is a maximum of 375mV at 500mA base current and 5A collector current.

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