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PBSS5350T

The Nexperia PBSS5350T is a 50V, 3A PNP low VCEsat transistor designed for power management applications. It features a low collector-emitter saturation resistance (RCEsat) and high collector current capability.

✓ Total Stock: 1,213 pcs

PBSS5350T Available from 2 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	713 pcs On Request	713 pcs	On Request	1	On Request	On Request	12+	On Request	On Request
PROSOFT ELECTRONICS ✓ Non-Authorised Inventory information	500 pcs On Request	500 pcs	On Request	1	On Request	On Request	24+	On Request	On Request

PBSS5350T Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Nexperia USA Inc.
Ambient Temperature	-65 to 150 °C
Junction Temperature	150 °C
Lead Style	Gull Wing
Mounting Type	Surface Mount
Storage Temperature	-65°C ~ 150°C

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PBSS5350T Description

Short technical summary and product information.

The Nexperia PBSS5350T is a PNP bipolar junction transistor (BJT) designed for power management applications. It offers a low collector-emitter saturation voltage (VCEsat) and a corresponding low saturation resistance (RCEsat), contributing to improved efficiency and reduced heat generation.

This transistor is rated for a collector-emitter voltage of -50V and a continuous collector current of -2A, with a repetitive peak collector current of -3A. The low saturation resistance is typically 90mΩ at -2A collector current and -200mA base current.

Packaged in a compact SOT23 surface-mounted device (SMD) plastic package, the PBSS5350T is suitable for various applications including low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).

Key features include high collector current capability and high collector current gain, making it a versatile component for efficient power control.

PBSS5350T Quick Information

Product Type: PNP Low VCEsat Transistor

Canonical Name: PBSS5350T 50V 3A PNP Low VCEsat Transistor

Subcategory: PNP

PBSS5350T Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

PBSS5350T Features

50V collector-emitter voltage rating.
3A repetitive peak collector current capability.
Low collector-emitter saturation resistance.
High collector current gain.
SOT23 surface-mount package.

PBSS5350T Applications

Power management applications.
Low and medium power DC/DC converters.
Supply line switching.
Battery chargers.
Linear voltage regulation.

PBSS5350T FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage for the PBSS5350T?

The maximum collector-emitter voltage (VCEO) is -50 V.

What package is the PBSS5350T available in?

The PBSS5350T is available in a SOT23 surface-mount package.

What is the operating temperature range of the PBSS5350T?

The ambient temperature range is -65 to 150 °C, with a maximum junction temperature of 150 °C.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is -2 A.

What is the typical saturation resistance of the PBSS5350T?

The typical collector-emitter saturation resistance (RCEsat) is 90 mΩ, with a maximum of 135 mΩ.

Is the PBSS5350T a PNP or NPN transistor?

The PBSS5350T is a PNP transistor, as indicated by the negative voltage and current ratings.

What is the maximum power dissipation of the PBSS5350T?

The maximum total power dissipation (Ptot) is 1.2 W at 25°C ambient temperature.