| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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299,020 pcs
|
299020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PBSS5330X,115 is a PNP low VCEsat (BISS) transistor designed for efficient power management and peripheral driving applications. It features a maximum collector-emitter voltage of -30V and a continuous collector current of -3A, with a peak capability of -5A.
This transistor offers a low collector-emitter saturation voltage (VCEsat) and high collector current capability, contributing to higher efficiency and reduced heat generation. Its SOT-89 package is suitable for surface mounting and provides good heat transfer.
Key electrical characteristics include a DC current gain (hFE) of 175 minimum at 1A and 2V, and a VCE saturation of 320mV maximum at 300mA and 3A. The transition frequency is 100MHz. The maximum power dissipation is 1.6W, with an operating temperature range of -65°C to 150°C.
Applications include DC/DC converters, supply line switching, battery chargers, LCD backlighting, and drivers for inductive loads like relays, buzzers, and motors.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the PBSS5330X,115 is -30V.
The PBSS5330X,115 transistor has a maximum continuous collector current (Ic) of -3A.
The Nexperia PBSS5330X,115 is supplied in a TO-243AA (SOT-89) package.
The maximum operating junction temperature (Tj) for the PBSS5330X,115 is 150°C.