PBSS5240ZF The Nexperia PBSS5240ZF is a PNP low VCEsat (BISS) transistor in a SOT-223 package. It offers a 40V collector-emitter voltage and a 2A collector current capability.
Mfr Part #:

PBSS5240ZF

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS5240ZF is a PNP low VCEsat (BISS) transistor in a SOT-223 package. It offers a 40V collector-emitter voltage and a 2A collector current capability.
Total Stock: 9,020 pcs
$ Price Range: $0.48

PBSS5240ZF Available from 1 distributor

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Non-Authorised
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PBSS5240ZF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Breakdown Voltage (Maximum @ open collector)
Breakdown Voltage Maximum
Collector-Emitter Saturation Resistance
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Style
Mounting Type
Operating Temperature
Operating Temperature (Minimum/Maximum)
Operating Voltage (Maximum @ open base)
Package Type
Peak Current (Maximum @ tp ≤ 1 ms; single pulse)
Power
Power Dissipation (Maximum @ Tamb = 25 °C)
Power Dissipation (Maximum)
Reverse Voltage (Maximum @ open emitter)
Reverse Voltage (Maximum)
Saturation Voltage (Maximum)
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum)

PBSS5240ZF Description

Short technical summary and product information.

The Nexperia PBSS5240ZF is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor designed for medium power applications. It features a collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 2A, with a peak collector current (ICM) of 3A. The transistor exhibits a low collector-emitter saturation voltage (VCEsat) of 320 mΩ at specific conditions, contributing to high energy efficiency and reduced heat generation.

 

This device is housed in a SOT-223 (SC-73) surface-mounted plastic package. Its AEC-Q101 qualification makes it suitable for demanding applications. Key electrical characteristics include a maximum power dissipation of 1.35W (with adequate heatsinking) and a gain bandwidth product (fT) of 150MHz. The operating temperature range is from -55°C to 150°C.

 

Applications for the PBSS5240ZF include DC-to-DC conversion, supply line switching, battery chargers, LCD backlighting, and driving inductive loads such as relays, buzzers, and motors. Its NPN complement is the PBSS4240Z.

PBSS5240ZF Quick Information

Product Type: PNP Transistor
Canonical Name: PBSS5240ZF PNP Low VCEsat (BISS) Transistor
Subcategory: BJT - Single

PBSS5240ZF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS5240ZF Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS5240ZF Features

  • PNP low VCEsat (BISS) transistor.
  • 40V collector-emitter voltage rating.
  • 2A continuous collector current.
  • Low VCEsat for high energy efficiency.
  • AEC-Q101 qualified for reliability.

PBSS5240ZF Applications

  • Suitable for DC-to-DC conversion.
  • Used for supply line switching.
  • Applicable for battery charger circuits.
  • Driver for low supply voltage applications.
  • Ideal for inductive load drivers.

PBSS5240ZF FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PBSS5240ZF?

The maximum collector-emitter voltage (VCEO) for the PBSS5240ZF is -40 V.

What is the continuous collector current rating of the PBSS5240ZF?

The PBSS5240ZF has a continuous collector current (IC) rating of 2 A.

What is the package type for the Nexperia PBSS5240ZF?

The Nexperia PBSS5240ZF is available in a SOT-223 package.

What is the maximum operating temperature for this transistor?

The maximum operating temperature (TJ) for the PBSS5240ZF is 150°C.

What is the collector-emitter saturation voltage of the PBSS5240ZF?

The collector-emitter saturation voltage (VCEsat) is a maximum of 320 mΩ under specific test conditions (IC = -1 A; IB = -100 mA).

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