PBSS5160U,115 The Nexperia PBSS4160U,115 is a PNP bipolar junction transistor designed for low saturation voltage applications. It offers a 60V breakdown voltage and 0.7A continuous collector current in a compact SOT-323 package.
Mfr Part #:

PBSS5160U,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS4160U,115 is a PNP bipolar junction transistor designed for low saturation voltage applications. It offers a 60V breakdown voltage and 0.7A continuous collector current in a compact SOT-323 package.
Total Stock: 160,020 pcs
$ Price Range: $0.48

PBSS5160U,115 Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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160,020 pcs
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PBSS5160U,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Mounting Type
Operating Temperature
Operating Temperature - Minimum
Peak Base Current
Power
Rce Saturation (Typical/Maximum @ IC =1 A ; IB =1 0 0 m A)
Storage Temperature
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS5160U,115 Description

Short technical summary and product information.

The Nexperia PBSS4160U,115 is a PNP Bipolar Junction Transistor (BJT) from the Breakthrough In Small Signal (BISS) family, characterized by its low collector-emitter saturation voltage (VCEsat). This feature contributes to high efficiency by reducing heat generation.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 700mA. The device boasts a minimum DC current gain (hFE) of 150 at 500mA and 5V. Its VCEsat is typically 340mV at 100mA collector current and 1A base current. The transistor operates at frequencies up to 185MHz.

 

Packaged in a surface-mount SOT-323 (SC-70) package, the PBSS4160U,115 is suitable for applications requiring a small PCB footprint. It has a maximum power dissipation of 415mW and an operating junction temperature range of -65°C to 150°C.

 

This transistor is well-suited for high voltage DC-to-DC conversion, MOSFET gate driving, motor control, and power switching applications, including those in the automotive sector.

PBSS5160U,115 Quick Information

Product Type: Transistor
Series: PBSS4160U
Canonical Name: PBSS4160U,115 PNP Low VCEsat (BISS) Transistor
Subcategory: PNP

PBSS5160U,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS5160U,115 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS5160U,115 Features

  • Low collector-emitter saturation voltage.
  • High collector current capability.
  • High collector current gain.
  • High efficiency due to less heat.
  • Compact SOT-323 surface mount package.

PBSS5160U,115 Applications

  • High voltage DC-to-DC conversion.
  • High voltage MOSFET gate driving.
  • High voltage motor control.
  • High voltage power switches.
  • Automotive applications.

PBSS5160U,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PBSS4160U,115?

The maximum collector-emitter voltage (VCEO) for the PBSS4160U,115 is 60V.

What is the continuous collector current rating of the PBSS4160U,115 transistor?

The PBSS4160U,115 has a continuous collector current (IC) rating of 700mA.

What is the package type for the Nexperia PBSS4160U,115?

The PBSS4160U,115 is supplied in a SC-70, SOT-323 surface mount package.

What is the maximum operating temperature for the PBSS4160U,115?

The maximum operating junction temperature (TJ) for the PBSS4160U,115 is 150°C.

What is the RoHS status of the PBSS4160U,115?

The PBSS4160U,115 is RoHS3 Compliant.

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