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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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40,020 pcs
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40020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The PBSS5160T-QR from Nexperia USA Inc. is a single PNP bipolar junction transistor (BJT) suitable for various electronic applications. This component is designed for surface mount installation, utilizing the TO-236AB (SOT-23) package.
Key electrical characteristics include a maximum voltage rating of 60V and a continuous current capability of 900mA. It operates at a maximum frequency of 220MHz and dissipates power up to 270mW. The transistor exhibits a minimum DC current gain (hFE) of 200 at 1mA and 5V, with a saturation voltage (Vce) of 330mV maximum at 100mA and 1A. The operating junction temperature ranges up to 150°C.
This device is specified with RoHS3 compliance and an MSL 1 rating, indicating suitability for a wide range of manufacturing environments. Its compact SOT-23 package makes it ideal for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The PBSS5160T-QR transistor has a maximum voltage rating of 60V.
The PBSS5160T-QR can handle a maximum continuous current of 900mA.
The operating junction temperature for the PBSS5160T-QR is up to 150°C.
The PBSS5160T-QR is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The PBSS5160T-QR is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the PBSS5160T-QR is 1 Unlimited.