PBSS4560PA,115 The Nexperia USA Inc. PBSS4560PA,115 is an NPN BISS transistor with a 60V collector-emitter voltage and 6A collector current. It is encapsulated in an ultra-thin SOT1061 package.
Mfr Part #:

PBSS4560PA,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PBSS4560PA,115 is an NPN BISS transistor with a 60V collector-emitter voltage and 6A collector current. It is encapsulated in an ultra-thin SOT1061 package.
Total Stock: 15 pcs
$ Price Range: $0.48

PBSS4560PA,115 Available from 1 distributor

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PBSS4560PA,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector-Base Voltage
Collector-Emitter Saturation Resistance
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Lead Spacing
Mounting Type
Operating Temperature
Package Description
Peak Collector Current
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS4560PA,115 Description

Short technical summary and product information.

The PBSS4560PA,115 from Nexperia USA Inc. is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor. It features a high collector current capability of 6A and a peak collector current of 7A. The collector-emitter voltage is rated at 60V, with a low collector-emitter saturation voltage (VCEsat) of 290mV at 300mA base current and 6A collector current.

 

This transistor is designed for applications requiring efficient power management and switching. Its key benefits include a smaller required Printed-Circuit Board (PCB) area compared to conventional transistors, an exposed heat sink for excellent thermal and electrical conductivity, and a leadless small SMD plastic package with medium power capability.

 

The PBSS4560PA,115 is encapsulated in an ultra-thin SOT1061 package, measuring 2x2x0.65mm. It is suitable for surface mounting and operates at a maximum junction temperature of 150°C. The transistor type is NPN, with a DC current gain (hFE) of 210 minimum at 2A collector current and 2V collector-emitter voltage. Its frequency response extends to 150MHz.

 

Common applications for this BISS transistor include load switching, battery-driven devices, power management circuits, charging circuits, and power switches for motors and fans.

PBSS4560PA,115 Quick Information

Product Type: Transistor
Canonical Name: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Subcategory: Single

PBSS4560PA,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS4560PA,115 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS4560PA,115 Features

  • Low collector-emitter saturation voltage.
  • High collector current capability.
  • Ultra-thin SOT1061 leadless package.
  • Exposed heat sink for thermal conductivity.
  • Suitable for power management applications.

PBSS4560PA,115 Applications

  • Ideal for load switch applications.
  • Used in battery-driven devices.
  • Suitable for power management circuits.
  • Applicable for charging circuits.
  • Effective for power switches.

PBSS4560PA,115 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the PBSS4560PA,115 transistor?

The collector-emitter voltage (VCEO) of the PBSS4560PA,115 transistor is 60V.

What is the maximum collector current for the PBSS4560PA,115 transistor?

The maximum collector current (IC) for the PBSS4560PA,115 transistor is 6A.

What is the package type for the PBSS4560PA,115 transistor?

The PBSS4560PA,115 transistor is supplied in the SOT1061 package.

What is the operating temperature range for the PBSS4560PA,115 transistor?

The operating temperature for the PBSS4560PA,115 transistor is up to 150°C (TJ).

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