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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 1752+ | On Request | On Request |
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The Nexperia PBSS4480XZ is a high-performance NPN bipolar junction transistor (BJT) designed for medium power applications. It features a high collector current capability of up to 4A and a collector-emitter voltage rating of 80V. The transistor is characterized by its low VCEsat (collector-emitter saturation voltage) at high current operation, which contributes to high efficiency and reduced heat generation.
This device is housed in a SOT-89 (TO-243AA) surface-mount package, which includes a collector pad for good heat transfer. Key electrical specifications include a maximum collector current of 4A, a peak collector current of 10A, and a low VCEsat of 270mV at 500mA/5A. The DC current gain (hFE) is a minimum of 250 at 1A/2V, and it operates at frequencies up to 120MHz.
Applications for the PBSS4480XZ include medium power peripheral drivers such as fans and motors, inverter applications for TFT displays, power switches for LAN and ADSL systems, medium power DC-to-DC converters, and battery chargers. Its PNP complement is the PBSS5480X.
The operating temperature range is up to 150°C (TJ), and it has a power dissipation of 550mW at 25°C ambient temperature when mounted on a standard footprint PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBSS4480XZ is 80V.
The PBSS4480XZ has a continuous collector current (IC) rating of 4A.
The Vce saturation voltage (VCEsat) is a maximum of 270mV at 500mA collector current and 5A peak collector current.
The PBSS4480XZ is supplied in a SOT-89 surface mount package, also known as TO-243AA.
The maximum operating junction temperature (TJ) for the PBSS4480XZ is 150°C.