PBSS4360PASX The Nexperia PBSS4360PASX is an NPN low VCEsat transistor designed for high efficiency applications. It offers a 60V collector-emitter voltage and a 3A collector current capability.
Mfr Part #:

PBSS4360PASX

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS4360PASX is an NPN low VCEsat transistor designed for high efficiency applications. It offers a 60V collector-emitter voltage and a 3A collector current capability.
Total Stock: 6,000 pcs
$ Price Range: $0.48

PBSS4360PASX Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,000 pcs
6000 pcs On Request 1 On Request On Request 25+ On Request On Request

PBSS4360PASX Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature
Base Current
Collector Current
Collector-Base Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Peak Base Current
Peak Collector Current
Power
Ptot (Maximum @ Tamb=25 °C)
RCEsat (Typical/Maximum @ IC = 3 A; IB = 300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C)
Storage Temperature
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS4360PASX Description

Short technical summary and product information.

The Nexperia PBSS4360PASX is an NPN low VCEsat transistor encapsulated in an ultra-thin DFN2020D-3 package. This surface-mount device is suitable for applications requiring high efficiency and reduced PCB area.

 

Key electrical specifications include a collector-emitter voltage of 60V and a continuous collector current of 3A, with a peak capability of 6A. The transistor exhibits a low collector-emitter saturation resistance (RCEsat) of typically 73mΩ at 3A and 300mA base current. Its DC current gain (hFE) is a minimum of 200 at 1A and 5V.

 

Designed for high-temperature applications, the PBSS4360PASX can operate up to a junction temperature of 175°C. The package features an exposed heat sink for excellent thermal and electrical conductivity, and side-wettable flanks for automatic optical inspection of solder joints.

 

This transistor is well-suited for load switching, battery-driven devices, power management, charging circuits, and power switches for motors or fans.

PBSS4360PASX Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: Automotive, AEC-Q101
Canonical Name: NPN Low VCEsat Transistor, 60V, 3A
Subcategory: Single

PBSS4360PASX Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS4360PASX Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS4360PASX Features

  • NPN low VCEsat transistor
  • 60V collector-emitter voltage
  • 3A continuous collector current
  • Low saturation resistance
  • 175°C maximum operating temperature

PBSS4360PASX Applications

  • Load switch applications
  • Battery-driven devices
  • Power management circuits
  • Charging circuit applications
  • Power switches for motors

PBSS4360PASX FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the PBSS4360PASX?

The collector-emitter voltage (VCEO) is 60V.

What is the maximum collector current for this transistor?

The maximum collector current (IC) is 3A.

What package does the PBSS4360PASX come in?

It comes in a DFN2020D-3 surface-mount package.

What is the maximum junction temperature for this device?

The maximum junction temperature is 175°C.

Is the PBSS4360PASX RoHS compliant?

Yes, it is RoHS3 compliant.

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