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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,045,020 pcs
|
1045020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Nexperia PBSS4350Z,135 is an NPN low VCEsat transistor designed for power management applications. It offers a collector-emitter voltage of 50V and a continuous collector current of 3A, with a peak capability of 5A.
Key features include a low collector-emitter saturation voltage (VCEsat) and high collector current gain (hFE) at high collector currents, contributing to higher efficiency and reduced heat generation. The transistor is AEC-Q101 qualified, indicating its suitability for demanding automotive and industrial environments.
This device is housed in a SOT-223 plastic surface-mounted package, which requires less PCB area compared to DPAK packages. Its applications include DC/DC converters, supply line switching, battery chargers, linear voltage regulation (LDO), peripheral drivers, and inductive load drivers such as relays, buzzers, and motors.
With a power dissipation of 2W and a junction temperature up to 150°C, the PBSS4350Z,135 is suitable for various power control tasks. Its operating frequency is up to 100MHz.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 50V.
The maximum continuous collector current (IC) is 3A.
It is supplied in a SOT-223 surface-mount package.
The junction temperature (TJ) can reach up to 150°C.
Yes, the PBSS4350Z,135 transistor is AEC-Q101 qualified.