| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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167,000 pcs
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167000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Nexperia PBSS4330X is an NPN bipolar junction transistor (BJT) featuring a low collector-emitter saturation voltage (VCEsat). This characteristic contributes to higher efficiency and reduced heat generation in power management applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 3A, with a peak collector current (ICM) capability of 5A. The collector-emitter saturation resistance (RCEsat) is rated between 80 mΩ and 100 mΩ under specific test conditions (IC = 3 A; IB = 300 mA; Tamb = 25 °C).
This transistor is housed in a SOT89 surface-mount package, suitable for various electronic designs. Its AEC-Q101 qualification indicates suitability for automotive applications. The operating temperature range is from -65°C to 150°C.
Applications for the PBSS4330X include DC/DC converters, supply line switching, battery chargers, peripheral drivers, and inductive load drivers such as relays, buzzers, and motors. Its low VCEsat makes it efficient for driver applications in low supply voltage scenarios.
30 V.
SOT89 surface-mount package.
-65 to 150 °C ambient.
3 A continuous, 5 A peak.
80-100 mΩ at IC=3 A, IB=300 mA.
1.6 W at 25 °C ambient, subject to PCB mounting conditions.
0.5 A.