PBSS4330X,115

The Nexperia PBSS4330X,115 is an NPN bipolar junction transistor (BJT) designed for low VCEsat applications. It comes in a compact SOT-89 (SC-62) surface-mount package, suitable for space-constrained designs.

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 30V and a continuous collector current (IC) of 3A, with a peak collector current (ICM) of 5A. The transistor features a low collector-emitter saturation voltage (VCEsat) of 300mV at 300mA/3A and a typical DC current gain (hFE) of 270 at 1A/2V. Its typical frequency response is up to 100MHz.

This transistor is well-suited for power management applications such as DC/DC converters, supply line switching, and battery chargers. It also serves as a peripheral driver for inductive loads like relays, buzzers, and motors, particularly in low supply voltage scenarios. The SOT-89 package includes a collector pad for enhanced heat transfer, with a maximum power dissipation of 1.6W at 25°C ambient temperature when mounted on a ceramic PCB with a 7 cm² pad.

Designed for efficiency, the PBSS4330X,115 contributes to less heat generation and reduced printed-circuit board requirements. It operates within a junction temperature range of -65°C to 150°C.