| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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73,020 pcs
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73020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PBSS4260PANSX is a dual NPN bipolar junction transistor (BJT) suitable for automotive applications. This component offers a collector-emitter breakdown voltage of 60V and can handle a maximum collector current of 2A. It has a high DC current gain (hFE) of 120 minimum at 1A and 2V, and a transition frequency of 140MHz.
The PBSS4260PANSX operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 370mW. The saturation voltage (Vce) is a maximum of 350mV at 200mA collector current and the corresponding base current. The transistor type is specified as 2 NPN (Dual).
Packaged in a compact DFN-2020D-6 surface-mount case, this device is designed for efficient integration into electronic circuits. The MSL rating is 1 (Unlimited), and it is RoHS3 compliant and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.25 | $1.25 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 60V.
The maximum continuous collector current (Ic) is 2A.
The minimum DC current gain (hFE) is 120 at 1A collector current and 2V collector-emitter voltage.
The transition frequency is 140MHz.
The operating temperature range is up to 150°C (TJ).
It is supplied in a DFN-2020D-6 surface-mount package.
Yes, the PBSS4260PANSX has an automotive grade qualification.