PBSS4260PANP,115 The Nexperia PBSS4260PANP,115 is an NPN/PNP low VCEsat (BISS) transistor. It offers a 60V collector-emitter voltage and 2A collector current capability.
Mfr Part #:

PBSS4260PANP,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS4260PANP,115 is an NPN/PNP low VCEsat (BISS) transistor. It offers a 60V collector-emitter voltage and 2A collector current capability.
✓ Total Stock: 4,020 pcs
$ Price Range: $0.99

PBSS4260PANP,115 Available from 1 distributor

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✓ Non-Authorised
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PBSS4260PANP,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Spacing
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS4260PANP,115 Description

Short technical summary and product information.

The Nexperia PBSS4260PANP,115 is a leadless, medium power, NPN/PNP Breakthrough In Small Signal (BISS) transistor in a DFN2020-6 (SOT1118) surface-mounted device (SMD) plastic package.

 

Key electrical specifications include a collector-emitter voltage of 60V and a continuous collector current of 2A. It features a very low collector-emitter saturation voltage (VCEsat) of 90mV at 50mA/500mA and a high DC current gain (hFE) of 120 at 1A/2V. The transistor operates at frequencies up to 140MHz and has a power dissipation of 510mW.

 

This transistor is AEC-Q101 qualified, indicating its suitability for automotive applications. Its design emphasizes high efficiency due to less heat generation and reduced Printed-Circuit Board (PCB) requirements.

 

Applications include load switching, battery-driven devices, power management, charging circuits, and power switches for motors or fans. The device is supplied in a 6-UFDFN Exposed Pad package, suitable for surface mounting.

PBSS4260PANP,115 Quick Information

Product Type: Transistor
Canonical Name: NPN/PNP low VCEsat (BISS) transistor
Subcategory: BJT Arrays

PBSS4260PANP,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS4260PANP,115 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS4260PANP,115 Features

  • NPN/PNP low VCEsat (BISS) transistor.
  • 60V collector-emitter voltage rating.
  • 2A continuous collector current capability.
  • AEC-Q101 qualified for automotive use.
  • Surface mount 6-UFDFN exposed pad package.

PBSS4260PANP,115 Applications

  • Ideal for load switching applications.
  • Suitable for battery-driven devices.
  • Used in power management circuits.
  • Applicable for charging circuits.
  • Powers small motors and fans.

PBSS4260PANP,115 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The collector-emitter voltage rating is 60V.

What package does the PBSS4260PANP,115 come in?

It comes in a 6-HUSON (2x2) surface-mount package with an exposed pad.

What is the maximum collector current?

The maximum collector current is 2A.

What is the collector-base voltage rating?

The collector-base voltage is 60V.

What is the emitter-base voltage rating?

The emitter-base voltage is 7V.

What is the operating temperature range?

The operating temperature is up to 150°C (TJ).

Is the device RoHS compliant?

Yes, it is RoHS3 compliant.

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