| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PBSS4260PANP,115 is a leadless, medium power, NPN/PNP Breakthrough In Small Signal (BISS) transistor in a DFN2020-6 (SOT1118) surface-mounted device (SMD) plastic package.
Key electrical specifications include a collector-emitter voltage of 60V and a continuous collector current of 2A. It features a very low collector-emitter saturation voltage (VCEsat) of 90mV at 50mA/500mA and a high DC current gain (hFE) of 120 at 1A/2V. The transistor operates at frequencies up to 140MHz and has a power dissipation of 510mW.
This transistor is AEC-Q101 qualified, indicating its suitability for automotive applications. Its design emphasizes high efficiency due to less heat generation and reduced Printed-Circuit Board (PCB) requirements.
Applications include load switching, battery-driven devices, power management, charging circuits, and power switches for motors or fans. The device is supplied in a 6-UFDFN Exposed Pad package, suitable for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 60V.
It comes in a 6-HUSON (2x2) surface-mount package with an exposed pad.
The maximum collector current is 2A.
The collector-base voltage is 60V.
The emitter-base voltage is 7V.
The operating temperature is up to 150°C (TJ).
Yes, it is RoHS3 compliant.