PBSS4250X,115 The Nexperia PBSS4250X,115 is an NPN low VCEsat transistor with a 50V rating and 2A current capability. It is supplied in a SOT-89 surface-mount package.
Mfr Part #:

PBSS4250X,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS4250X,115 is an NPN low VCEsat transistor with a 50V rating and 2A current capability. It is supplied in a SOT-89 surface-mount package.
Total Stock: 132,020 pcs
$ Price Range: $0.48

PBSS4250X,115 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
132,020 pcs
132020 pcs On Request 1 On Request On Request On Request On Request On Request

PBSS4250X,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature
Base Current
Collector-Base Voltage
Current
DC Current Gain (Minimum @ VCE = 2 V; IC = 0.1 A; Tamb = 25 °C)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Peak Collector Current
Power
Storage Temperature
Supplier Device Package
Total Power Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS4250X,115 Description

Short technical summary and product information.

The Nexperia PBSS4250X,115 is an NPN bipolar junction transistor designed for low VCEsat applications. It offers a maximum collector-emitter voltage of 50V and a continuous collector current of 2A.

 

Key electrical characteristics include a DC current gain (hFE) of 300 at 0.1A and 2V, and a maximum Vce saturation of 320mV at 200mA and 2A. The transistor operates at frequencies up to 100MHz and has a maximum power dissipation of 550mW at 25°C ambient temperature when mounted on a standard FR4 PCB.

 

This device is housed in a SOT-89 (TO-243AA) surface-mount package, making it suitable for space-constrained designs. The operating temperature range is -65°C to 150°C (TJ). Its PNP complement is the PBSS5250X.

 

Applications include power management, DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers.

PBSS4250X,115 Quick Information

Product Type: NPN Transistor
Canonical Name: PBSS4250X,115 NPN Low VCEsat Transistor
Subcategory: Bipolar (BJT) - Single

PBSS4250X,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS4250X,115 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS4250X,115 Features

  • NPN low VCEsat transistor.
  • 50V collector-emitter voltage rating.
  • 2A continuous collector current.
  • SOT-89 surface-mount package.
  • AEC-Q101 qualified.

PBSS4250X,115 Applications

  • Suitable for power management.
  • Used in DC/DC converters.
  • Ideal for supply line switching.
  • Applicable for battery chargers.
  • Drives inductive loads like relays.

PBSS4250X,115 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PBSS4250X,115?

The maximum collector-emitter voltage is 50V.

What is the continuous collector current rating?

The continuous collector current rating is 2A.

What is the package type for this transistor?

This transistor is supplied in a SOT-89 package.

What is the operating temperature range?

The operating temperature range is -65°C to 150°C.

What is the DC current gain (hFE) at typical conditions?

The DC current gain (hFE) is 300 at IC = 0.1 A and VCE = 2 V.

What is the Vce saturation voltage?

The Vce saturation voltage is a maximum of 320mV at IB = 200mA and IC = 2A.

Home
Account

Categories