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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
132,020 pcs
|
132020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Base Current | |
| Collector-Base Voltage | |
| Current | |
| DC Current Gain (Minimum @ VCE = 2 V; IC = 0.1 A; Tamb = 25 °C) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Nexperia PBSS4250X,115 is an NPN bipolar junction transistor designed for low VCEsat applications. It offers a maximum collector-emitter voltage of 50V and a continuous collector current of 2A.
Key electrical characteristics include a DC current gain (hFE) of 300 at 0.1A and 2V, and a maximum Vce saturation of 320mV at 200mA and 2A. The transistor operates at frequencies up to 100MHz and has a maximum power dissipation of 550mW at 25°C ambient temperature when mounted on a standard FR4 PCB.
This device is housed in a SOT-89 (TO-243AA) surface-mount package, making it suitable for space-constrained designs. The operating temperature range is -65°C to 150°C (TJ). Its PNP complement is the PBSS5250X.
Applications include power management, DC/DC converters, supply line switching, battery chargers, LCD backlighting, peripheral drivers, and inductive load drivers.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 50V.
The continuous collector current rating is 2A.
This transistor is supplied in a SOT-89 package.
The operating temperature range is -65°C to 150°C.
The DC current gain (hFE) is 300 at IC = 0.1 A and VCE = 2 V.
The Vce saturation voltage is a maximum of 320mV at IB = 200mA and IC = 2A.