PBSS4160U,115 The Nexperia USA Inc. PBSS4160U,115 is an NPN low VCEsat (BISS) transistor. It features a 60V collector-emitter voltage and 750mA DC current capability.
Mfr Part #:

PBSS4160U,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PBSS4160U,115 is an NPN low VCEsat (BISS) transistor. It features a 60V collector-emitter voltage and 750mA DC current capability.
Total Stock: 19,020 pcs
$ Price Range: $0.48

PBSS4160U,115 Available from 1 distributor

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Non-Authorised
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PBSS4160U,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Power Dissipation (Maximum @ T amb ≤ 25 °C [1])
Power Dissipation (Maximum @ T amb ≤ 25 °C [2])
Power Dissipation (Maximum @ T amb ≤ 25 °C [3])
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
current (Maximum @ [1])
current (Maximum @ single pulse; t p ≤ 1 m s)
resistance (Typical/Maximum @ IC =1 A ; IB =1 0 0 m A [2])
temperature (Maximum)
voltage (Maximum @ open collector)
voltage (Maximum @ open emitter)

PBSS4160U,115 Description

Short technical summary and product information.

This NPN low VCEsat (BISS) transistor from Nexperia USA Inc. is designed for high efficiency and reduced PCB area. It offers a collector-emitter voltage of 60V and a continuous collector current of 750mA.

 

The PBSS4160U,115 features a low collector-emitter saturation voltage (VCEsat) and high collector current gain (hFE) at high collector currents. Its high efficiency is due to less heat generation compared to conventional transistors.

 

Packaged in a compact SOT-323 (SC-70) surface-mounted device package, this transistor is suitable for applications requiring space efficiency on the Printed-Circuit Board (PCB).

 

Key applications include high voltage DC-to-DC conversion, high voltage MOSFET gate driving, high voltage motor control, high voltage power switches, and automotive applications.

PBSS4160U,115 Quick Information

Product Type: Transistor
Canonical Name: NPN low VCEsat (BISS) transistor
Subcategory: NPN

PBSS4160U,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS4160U,115 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS4160U,115 Features

  • Low collector-emitter saturation voltage.
  • High collector current capability.
  • High collector current gain.
  • High efficiency due to less heat.
  • Surface mounted SOT-323 package.

PBSS4160U,115 Applications

  • High voltage DC-to-DC conversion.
  • High voltage MOSFET gate driving.
  • High voltage motor control.
  • High voltage power switches.
  • Automotive applications.

PBSS4160U,115 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the PBSS4160U,115?

The collector-emitter voltage (open base) is 60V.

What is the maximum continuous collector current?

The maximum continuous collector current is 750mA.

What is the package type for the PBSS4160U,115 transistor?

The transistor is available in a SOT-323 (SC-70) package.

What is the operating temperature range?

The operating junction temperature is up to 150°C.

What is the DC current gain (hFE) at 500mA and 5V?

The minimum DC current gain (hFE) at 500mA and 5V is 200.

What is the collector-emitter saturation resistance at 1A and 100mA base current?

The collector-emitter saturation resistance is typically 230mΩ and a maximum of 280mΩ.

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