5962-9682201QDA
Texas Instruments
The Texas Instruments 5962-9682201QDA is a MILITARY 4-CH, 2-INPUT, 2-V TO 5 current regulation transistor. It features a W CFP package with 14 pins.
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1,522 pcs
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1522 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NXP Semiconductors PBSS4160T,215 is an NPN low VCEsat (BISS) transistor designed for various applications including power management, peripheral drivers, and inductive load driving. It offers a low collector-emitter saturation voltage (VCEsat) and high collector current capability.
Key electrical specifications include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 1A. The peak collector current (ICM) can reach 2A. The collector-emitter saturation resistance (RCEsat) is a maximum of 250 mΩ under specific test conditions.
This transistor is housed in a compact SOT23 plastic surface-mounted package with 3 terminals. The body dimensions are 2.9 mm x 1.3 mm x 1 mm, with a pitch of 1.9 mm. It is suitable for applications requiring reduced printed-circuit board area and efficient heat generation.
Applications for the PBSS4160T,215 include automotive 42V power systems, telecom infrastructure, industrial power management such as DC-to-DC conversion and supply line switching, peripheral drivers, and drivers in low supply voltage applications like lamps and LEDs.
| Qty | Low | High |
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| 1+ | $0.42 | $0.42 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBSS4160T,215 is 60V.
The continuous collector current (IC) rating is 1A.
The peak collector current (ICM) is 2A.
The collector-emitter saturation resistance (RCEsat) is a maximum of 250 mΩ.
The PBSS4160T,215 is supplied in a SOT23 surface-mount package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
