| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,055 pcs
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8055 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present | |
| Tape & Reel |
The PBSS4160T is a high-performance NPN bipolar junction transistor (BJT) from NXP Semiconductors, designed for low VCEsat applications. It offers a maximum collector-emitter voltage (Vce) of 60V and a continuous collector current (Ic) of 1A.
Key electrical characteristics include a low collector-emitter saturation voltage (Vce_sat) of 0.3V at 1A and 0.25V at 100mA, ensuring efficient power handling. The transistor provides a minimum DC current gain (hFE) of 160 at 1A and 200 at 100mA, along with a minimum transition frequency (fT) of 150MHz.
Packaged in a surface-mount SC-74 case, the PBSS4160T is suitable for various electronic circuits requiring a robust and efficient NPN transistor. It is supplied on tape and reel with a standard package quantity of 2000 units.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the PBSS4160T is 60V.
The PBSS4160T has a continuous collector current (Ic) rating of 1A.
The collector-emitter saturation voltage (Vce_sat) is a maximum of 0.3V when the collector current is 1A and the base current is 10mA.
The minimum DC current gain (hFE) is 160 at an IC of 1A and VCE of 5V, and 200 at an IC of 100mA and VCE of 5V.
The PBSS4160T is available in the SC-74 package, which is a surface-mount type.
The PBSS4160T is supplied on tape and reel, with a standard package quantity of 2000 units.