PBSS4160DS,115 The Nexperia PBSS4160DS,115 is a 60V, 1A NPN/NPN bipolar transistor array in a 6-TSOP package. It offers low collector-emitter saturation voltage and high efficiency.
Mfr Part #:

PBSS4160DS,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS4160DS,115 is a 60V, 1A NPN/NPN bipolar transistor array in a 6-TSOP package. It offers low collector-emitter saturation voltage and high efficiency.
Total Stock: 106,020 pcs
$ Price Range: $0.99

PBSS4160DS,115 Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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106,020 pcs
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PBSS4160DS,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS4160DS,115 Description

Short technical summary and product information.

The Nexperia PBSS4160DS,115 is a dual NPN low VCEsat transistor pair housed in a SOT457 (SC-74) surface-mounted device (SMD) plastic package. This transistor array features a low collector-emitter saturation voltage (VCEsat) and a high collector current capability of 1A.

 

Key electrical specifications include a collector-emitter voltage of 60V, a peak collector current of 2A, and a DC current gain (hFE) of 200 at 500mA and 5V. The device also boasts a low collector-emitter saturation resistance of 200 mΩ at 1A and 100mA, contributing to high efficiency and reduced heat generation. Its transition frequency is rated at 220MHz.

 

Designed for applications requiring dual low-power switches, such as motors and fans, this transistor array is AEC-Q101 qualified, making it suitable for automotive applications. The compact 6-TSOP package requires a smaller PCB area compared to conventional transistors, and it is designed for surface mounting.

 

Additional specifications include a maximum power dissipation of 700mW at 25°C ambient temperature and an operating temperature range of -65°C to 150°C.

PBSS4160DS,115 Quick Information

Product Type: Bipolar Transistor Array
Series: PBSS4160DS
Canonical Name: Nexperia PBSS4160DS,115 NPN/NPN Low VCEsat Transistor
Subcategory: NPN/NPN

PBSS4160DS,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS4160DS,115 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS4160DS,115 Features

  • Dual NPN low VCEsat transistor pair.
  • 60V collector-emitter voltage rating.
  • 1A continuous collector current capability.
  • AEC-Q101 qualified for automotive use.
  • Compact 6-TSOP surface mount package.

PBSS4160DS,115 Applications

  • Used in switching power supplies
  • Suitable for amplification circuits
  • Ideal for compact electronic modules
  • Applicable in relay driver circuits

PBSS4160DS,115 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PBSS4160DS,115?

The maximum collector-emitter voltage is 60V.

What is the continuous collector current rating?

The continuous collector current rating is 1A.

What is the typical DC current gain (hFE) for this transistor array?

The minimum DC current gain (hFE) is 200 at 500mA collector current and 5V collector-emitter voltage.

What is the package type for the PBSS4160DS,115?

The package type is 6-TSOP.

What is the operating temperature range?

The operating temperature range is -65°C to 150°C.

Is the PBSS4160DS,115 AEC-Q101 qualified?

Yes, the PBSS4160DS,115 is AEC-Q101 qualified.

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