| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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106,020 pcs
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106020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PBSS4160DS,115 is a dual NPN low VCEsat transistor pair housed in a SOT457 (SC-74) surface-mounted device (SMD) plastic package. This transistor array features a low collector-emitter saturation voltage (VCEsat) and a high collector current capability of 1A.
Key electrical specifications include a collector-emitter voltage of 60V, a peak collector current of 2A, and a DC current gain (hFE) of 200 at 500mA and 5V. The device also boasts a low collector-emitter saturation resistance of 200 mΩ at 1A and 100mA, contributing to high efficiency and reduced heat generation. Its transition frequency is rated at 220MHz.
Designed for applications requiring dual low-power switches, such as motors and fans, this transistor array is AEC-Q101 qualified, making it suitable for automotive applications. The compact 6-TSOP package requires a smaller PCB area compared to conventional transistors, and it is designed for surface mounting.
Additional specifications include a maximum power dissipation of 700mW at 25°C ambient temperature and an operating temperature range of -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 60V.
The continuous collector current rating is 1A.
The minimum DC current gain (hFE) is 200 at 500mA collector current and 5V collector-emitter voltage.
The package type is 6-TSOP.
The operating temperature range is -65°C to 150°C.
Yes, the PBSS4160DS,115 is AEC-Q101 qualified.