| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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31,020 pcs
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31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This NPN/PNP BISS transistor from Nexperia, model PBSS4160DPN,115, offers low collector-emitter saturation voltage (VCEsat) and high collector current capability. It is designed for applications requiring high efficiency and reduced heat generation.
The device operates with a collector-emitter voltage of up to 60V for the NPN transistor and -60V for the PNP transistor. It can handle a continuous collector current of 1A for the NPN and -900mA for the PNP, with peak currents up to 2A. The transistor exhibits a low saturation resistance, with a maximum of 250mΩ for the NPN and 330mΩ for the PNP under specified conditions.
Packaged in a compact SOT457 (SC-74) surface-mounted device package with 6 leads, this transistor is suitable for applications where Printed-Circuit Board (PCB) space is limited. Its features include high collector current gain (hFE) at high collector currents and high efficiency due to less heat generation.
Key applications include complementary MOSFET drivers, half and full bridge motor drivers, and dual low-power switches. The device is also suitable for automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 60V for the NPN transistor and -60V for the PNP transistor.
The maximum continuous collector current is 1A for the NPN and -900mA for the PNP.
The collector-emitter saturation resistance is a maximum of 250mΩ for the NPN and 330mΩ for the PNP.
This transistor is supplied in a SOT457 (SC-74) package.
The operating temperature range is up to 150°C.