PBSS4160DPN,115 The Nexperia PBSS4160DPN,115 is an NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair. It features a 60V collector-emitter voltage and high collector current capability.
Mfr Part #:

PBSS4160DPN,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS4160DPN,115 is an NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair. It features a 60V collector-emitter voltage and high collector current capability.
✓ Total Stock: 31,020 pcs
$ Price Range: $0.99

PBSS4160DPN,115 Available from 1 distributor

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✓ Non-Authorised
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PBSS4160DPN,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS4160DPN,115 Description

Short technical summary and product information.

This NPN/PNP BISS transistor from Nexperia, model PBSS4160DPN,115, offers low collector-emitter saturation voltage (VCEsat) and high collector current capability. It is designed for applications requiring high efficiency and reduced heat generation.

 

The device operates with a collector-emitter voltage of up to 60V for the NPN transistor and -60V for the PNP transistor. It can handle a continuous collector current of 1A for the NPN and -900mA for the PNP, with peak currents up to 2A. The transistor exhibits a low saturation resistance, with a maximum of 250mΩ for the NPN and 330mΩ for the PNP under specified conditions.

 

Packaged in a compact SOT457 (SC-74) surface-mounted device package with 6 leads, this transistor is suitable for applications where Printed-Circuit Board (PCB) space is limited. Its features include high collector current gain (hFE) at high collector currents and high efficiency due to less heat generation.

 

Key applications include complementary MOSFET drivers, half and full bridge motor drivers, and dual low-power switches. The device is also suitable for automotive applications.

PBSS4160DPN,115 Quick Information

Product Type: Transistor
Canonical Name: NPN/PNP low VCEsat (BISS) transistor
Subcategory: BJT Arrays

PBSS4160DPN,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS4160DPN,115 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS4160DPN,115 Features

  • Low collector-emitter saturation voltage.
  • High collector current capability.
  • High collector current gain.
  • High efficiency, less heat generation.
  • Smaller PCB area required.

PBSS4160DPN,115 Applications

  • Complementary MOSFET driver.
  • Half and full bridge motor drivers.
  • Dual low power switches.
  • Automotive applications.

PBSS4160DPN,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage for the PBSS4160DPN,115 transistor?

The collector-emitter voltage is 60V for the NPN transistor and -60V for the PNP transistor.

What is the maximum continuous collector current for this NPN/PNP transistor?

The maximum continuous collector current is 1A for the NPN and -900mA for the PNP.

What is the saturation resistance of the PBSS4160DPN,115 transistor?

The collector-emitter saturation resistance is a maximum of 250mΩ for the NPN and 330mΩ for the PNP.

What package type is the PBSS4160DPN,115 transistor supplied in?

This transistor is supplied in a SOT457 (SC-74) package.

What is the operating temperature range for the PBSS4160DPN,115 transistor?

The operating temperature range is up to 150°C.

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