PBSS4130T,215 The Nexperia USA Inc. PBSS4130T,215 is an NPN BISS transistor designed for power management and peripheral driver applications. It offers a low collector-emitter saturation voltage and high current capability.
Mfr Part #:

PBSS4130T,215

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia USA Inc. PBSS4130T,215 is an NPN BISS transistor designed for power management and peripheral driver applications. It offers a low collector-emitter saturation voltage and high current capability.
Total Stock: 31,020 pcs
$ Price Range: $0.48

PBSS4130T,215 Available from 1 distributor

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PBSS4130T,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Equivalent On-Resistance (RCEsat)
Frequency
Gain Bandwidth Product (GBWP)
Junction Temperature
Mounting Type
Operating Temperature
Package Type
Peak Collector Current (ICM)
Power
Power Dissipation (Maximum @ Tamb ≤ 25 °C; note 1)
Power Dissipation (Maximum @ Tamb ≤ 25 °C; note 2)
Storage Temperature
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
Voltage - Maximum

PBSS4130T,215 Description

Short technical summary and product information.

The Nexperia USA Inc. PBSS4130T,215 is an NPN Bipolar Junction Transistor (BJT) from the BISS (Breakthrough in Small Signal) family, designed for applications requiring low collector-emitter saturation voltage (VCEsat). This transistor features a maximum collector current of 1A and a collector-emitter voltage of 30V.

 

Key electrical characteristics include a typical gain bandwidth product of 100MHz and a minimum DC current gain (hFE) of 300 at 500mA and 2V. The Vce saturation is a maximum of 270mV at 50mA and 1A, contributing to high efficiency and reduced heat generation.

 

This device is housed in a compact SOT-23-3 surface mount package, making it suitable for space-constrained designs. Its applications include power management tasks such as DC/DC conversion, supply line switching, and battery chargers, as well as peripheral driving for loads like LEDs, relays, buzzers, and motors.

 

The operating temperature range is from -65°C to 150°C, with a maximum power dissipation of 480mW at 25°C when mounted on a standard footprint FR4 PCB with a 1cm² collector pad.

PBSS4130T,215 Quick Information

Product Type: Bipolar Transistor
Canonical Name: Nexperia PBSS4130T,215 NPN Low VCEsat (BISS) Transistor
Subcategory: NPN

PBSS4130T,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS4130T,215 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS4130T,215 Features

  • NPN BISS transistor for low VCEsat.
  • 30V collector-emitter voltage rating.
  • 1A continuous collector current capability.
  • 100MHz gain bandwidth product.
  • Compact SOT-23-3 surface mount package.

PBSS4130T,215 Applications

  • Ideal for DC/DC converters.
  • Suitable for supply line switching.
  • Used in battery charger circuits.
  • Effective for LCD backlighting.
  • Drives inductive loads like relays.

PBSS4130T,215 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the PBSS4130T,215?

The collector-emitter voltage (VCEO) is 30V.

What package does the PBSS4130T,215 come in?

It comes in a TO236AB surface mount package.

What is the maximum collector current for this transistor?

The maximum collector current is 1A.

What is the maximum power dissipation of the PBSS4130T,215?

The maximum power dissipation is 480 mW at 25°C ambient temperature.

What is the junction temperature rating?

The junction temperature can reach up to 150°C.

Is the PBSS4130T,215 RoHS compliant?

Yes, it is RoHS3 compliant.

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