Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum @ Tamb ≤ 25 °C [1]) | |
| Power Dissipation (Maximum @ Tamb ≤ 25 °C [2]) | |
| Power Dissipation (Maximum @ Tamb ≤ 25 °C [3]) | |
| Storage Temperature | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| current (Maximum @ single pulse; tp ≤ 1 ms) | |
| resistance (Typical/Maximum @ IC = −2 A ; IB = −200 mA) | |
| voltage (Maximum @ open base) | |
| voltage (Maximum @ open collector) | |
| voltage (Maximum @ open emitter) |
The Nexperia PBSS4032PT,215 is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor designed for efficient power management applications. This component offers a low collector-emitter saturation voltage (VCEsat) and optimized switching times, contributing to high energy efficiency and reduced heat generation.
Key electrical characteristics include a maximum collector-emitter voltage of 30V and a continuous collector current capability of 2.4A, with a peak capability of 5A. The transistor exhibits a minimum DC current gain (hFE) of 150 at 1A and 2V, and a maximum Vce saturation of 330mV at 200mA and 2A. Its frequency response extends to 160MHz.
Packaged in a compact SOT23 (TO-236AB) surface-mount device package, the PBSS4032PT,215 is suitable for applications where space on the Printed-Circuit Board (PCB) is limited. Its AEC-Q101 qualification indicates suitability for demanding automotive and industrial environments.
Applications for this transistor include DC-to-DC conversion, battery-driven devices, general power management, and charging circuits. Its NPN complement is the PBSS4032NT.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBSS4032PT,215 is -30 V.
The PBSS4032PT,215 transistor has a continuous collector current rating of -2.4 A.
The PBSS4032PT,215 is supplied in a TO-236-3, SC-59, SOT-23-3 package.
The operating ambient temperature for the PBSS4032PT,215 ranges from -55°C to 150°C.
The typical collector-emitter saturation resistance (RCEsat) of the PBSS4032PT,215 at 2A collector current is 110 mΩ.
The minimum DC current gain (hFE) for the PBSS4032PT,215 is 150 at 1A collector current and 2V collector-emitter voltage.
The PBSS4032PT,215 transistor is suitable for DC-to-DC conversion, battery-driven devices, power management, and charging circuits.