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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
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2,250 pcs
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2250 pcs | On Request | 1 | On Request | On Request | 1346+ | On Request | On Request |
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The NXP Semiconductors PBSS306NX is an NPN low VCEsat transistor housed in a SOT89 package. This device is engineered for high-voltage applications, offering a collector-emitter voltage of up to 100V and a continuous collector current capability of 4.5A.
Key features include a low collector-emitter saturation voltage (VCEsat) and high collector current capability, contributing to high efficiency and reduced heat generation. Its compact SOT89 package allows for a smaller Printed-Circuit Board (PCB) area compared to conventional transistors.
Applications for the PBSS306NX include high-voltage DC-to-DC conversion, high-voltage MOSFET gate driving, high-voltage motor control, and high-voltage power switches. It is also suitable for automotive applications.
The maximum VCEO is 100V.
The maximum continuous collector current is 4.5A.
The peak collector current is 9A for a single pulse up to 1ms.
The maximum saturation resistance is 56mΩ at IC=4A, IB=200mA, pulsed.
Maximum total power dissipation is 2.1W at 25°C ambient.
The PBSS306NX is packaged in a SOT89 surface-mount package.
The maximum junction temperature is 150°C.