| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Nexperia BF622 is an NPN high-voltage transistor suitable for various electronic applications. It offers a maximum collector-emitter voltage (VCEO) of 250V and a continuous collector current (IC) of up to 50mA.
This transistor is housed in a SOT89 surface-mount plastic package, which is ideal for space-constrained designs. The package has a lead spacing of 1.5 mm and body dimensions of 4.5 mm x 2.5 mm x 1.5 mm.
Key electrical characteristics include a DC current gain (hFE) of 50 at VCE = 20V and IC = 25mA. The device also specifies a peak collector current (ICM) of 100mA and a peak base current (IBM) of 50mA under single pulse conditions.
Thermal performance is supported by various power dissipation ratings depending on the PCB mounting conditions, with a maximum junction temperature of 150°C. Thermal resistance from junction to ambient ranges from 113 K/W to 250 K/W based on mounting pad size.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage is 250 V.
The BF622 is available in an SOT89 surface-mount package with body dimensions of 4.5 mm x 2.5 mm x 1.5 mm and 1.5 mm lead spacing.
Maximum junction temperature, maximum ambient temperature, and maximum storage temperature are all 150 °C.
Maximum continuous collector current is 50 mA, and peak collector current is 100 mA.
Minimum DC current gain is 50, measured at VCE = 20 V and IC = 25 mA.
Power dissipation is 0.5 W with a standard footprint, 0.8 W with a 1 cm² collector pad, and 1.1 W with a 6 cm² collector pad.
Maximum collector-base voltage is 250 V, and maximum emitter-base voltage is 5 V.