PBSS305NX,115 The Nexperia PBSS305NX,115 is an 80V, 4.6A NPN low VCEsat transistor in a SOT-89 package. It offers high efficiency and a small PCB footprint.
Mfr Part #:

PBSS305NX,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS305NX,115 is an 80V, 4.6A NPN low VCEsat transistor in a SOT-89 package. It offers high efficiency and a small PCB footprint.
Total Stock: 6,020 pcs
$ Price Range: $0.48

PBSS305NX,115 Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,020 pcs
6020 pcs On Request 1 On Request On Request On Request On Request On Request

PBSS305NX,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Saturation Resistance
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Operating Temperature - Maximum
Package Description
Peak Collector Current
Power
Reverse Voltage (Maximum @ open collector)
Reverse Voltage (Maximum @ open emitter)
Saturation Voltage (Maximum @ IC = 4 A; IB = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C)
Storage Temperature
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS305NX,115 Description

Short technical summary and product information.

The Nexperia PBSS305NX,115 is an NPN low VCEsat transistor designed for high-voltage applications. It features a collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 4.6A, with a peak current capability of 9.2A. The transistor boasts a low collector-emitter saturation voltage (VCEsat) of typically 38mΩ at 4A and a high collector current gain (hFE) of 180 at 2A.

 

This device is housed in a SOT-89 (TO-243AA) surface-mount package, offering a smaller PCB area compared to conventional transistors. Its high efficiency reduces heat generation, making it suitable for demanding applications. The PBSS305NX,115 is AEC-Q101 qualified, indicating its suitability for automotive environments.

 

Key applications include high-voltage DC-to-DC conversion, MOSFET gate driving, motor control, and power switches for motors and fans. The operating junction temperature ranges up to 150°C, with a total power dissipation of 2.1W on a ceramic PCB.

PBSS305NX,115 Quick Information

Product Type: NPN Transistor
Canonical Name: PBSS305NX,115 NPN Low VCEsat Transistor
Subcategory: Single

PBSS305NX,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS305NX,115 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS305NX,115 Features

  • 80V collector-emitter voltage rating.
  • 4.6A continuous collector current.
  • Low VCEsat for high efficiency.
  • SOT-89 surface-mount package.
  • AEC-Q101 qualified for automotive.

PBSS305NX,115 Applications

  • High-voltage DC-to-DC conversion.
  • Driving high-voltage MOSFET gates.
  • Controlling high-voltage motors.
  • Power switching for motors and fans.
  • Automotive applications.

PBSS305NX,115 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PBSS305NX,115?

The maximum collector-emitter voltage (VCEO) is 80V.

What is the continuous collector current rating?

The continuous collector current (IC) is 4.6A.

What is the saturation resistance at typical operating conditions?

The collector-emitter saturation resistance (RCEsat) is typically 38mΩ at IC = 4A and IB = 200mA.

What is the package type for this transistor?

This transistor is supplied in a SOT-89 surface-mount package.

What is the operating temperature range?

The operating junction temperature (TJ) can reach up to 150°C.

Is this transistor AEC-Q101 qualified?

Yes, the PBSS305NX,115 is AEC-Q101 qualified.

Home
Account

Categories