| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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100 pcs
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100 pcs | On Request | 1 | On Request | On Request | 16+ | On Request | On Request |
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The Nexperia USA Inc. PBSS304PZ,135 is a PNP low VCEsat Breakthrough In Small Signal (BISS) transistor. It is packaged in a SOT-223 surface-mount plastic package.
Key electrical specifications include a collector-emitter voltage of 60V and a continuous collector current of 4.5A. The transistor exhibits a low collector-emitter saturation voltage (VCEsat) of 375mV at a collector current of 4.5A and base current of 225mA. It also features a high DC current gain (hFE) of 150 at 2A collector current and 2V collector-emitter voltage, and a frequency response up to 130MHz.
This BISS transistor is designed for high efficiency and reduced heat generation, making it suitable for applications requiring smaller PCB areas compared to conventional transistors. Its high collector current capability and low saturation voltage are beneficial in power switching applications.
The device operates at junction temperatures up to 150°C and has a total power dissipation of up to 2W depending on the mounting conditions. The SOT-223 package is designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) for the PBSS304PZ,135 is 60V.
The PBSS304PZ,135 can handle a maximum continuous collector current of 4.5A.
The Vce Saturation voltage is a maximum of 375mV at a collector current of 4.5A and base current of 225mA.
The PBSS304PZ,135 is supplied in a SOT-223 package.
The ambient operating temperature range for this transistor is -65°C to +150°C.