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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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13,020 pcs
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13020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector - Emitter Saturation Voltage | |
| Collector-Base Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Peak Collector Current | |
| Power | |
| Supplier Device Package | |
| Supplier Package | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Nexperia PBSS304NZ,135 is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor designed for surface-mount applications. It comes in a SOT-223 (SC-73) plastic package.
This transistor features a low collector-emitter saturation voltage (VCEsat) and high collector current capability (IC) up to 5.2A, with a peak collector current of 10.4A. It has a DC current gain (hFE) of 250 minimum at 2A and 2V, and a frequency response up to 130MHz. The maximum collector-emitter voltage (VCEO) is 60V.
With a total power dissipation of 1.7W (Tamb ≤ 25°C on FR4 PCB with 6 cm2 mounting pad) and a maximum junction temperature of 150°C, this device is suitable for applications requiring high efficiency and reduced heat generation. Its compact size and performance characteristics make it ideal for space-constrained designs.
Applications include high-voltage DC-to-DC conversion, high-voltage MOSFET gate driving, high-voltage motor control, high-voltage power switches, and automotive applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 60V.
The continuous collector current (IC) is 5.2A.
This transistor is supplied in a SOT-223 package.
The operating junction temperature (TJ) is up to 150°C.
The collector-emitter saturation voltage (VCEsat) is a maximum of 395mV at 4A collector current and 200mA base current.