PBSS303ND,115 The Nexperia PBSS303ND,115 is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor. It offers a 60V collector-emitter voltage and 1A collector current capability.
Mfr Part #:

PBSS303ND,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS303ND,115 is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor. It offers a 60V collector-emitter voltage and 1A collector current capability.
Total Stock: 61,020 pcs
$ Price Range: $0.48

PBSS303ND,115 Available from 1 distributor

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61,020 pcs
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PBSS303ND,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Saturation Resistance
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Peak Collector Current
Power
Power Dissipation
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS303ND,115 Description

Short technical summary and product information.

The Nexperia PBSS303ND,115 is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor designed for high-voltage applications. It features a collector-emitter voltage of 60V and a continuous collector current capability of 1A, with a peak capability of 6A.

 

This transistor boasts a low collector-emitter saturation voltage (VCEsat) and high collector current gain (hFE) at high collector currents, contributing to high efficiency and reduced heat generation. Its typical frequency is 140MHz.

 

The PBSS303ND,115 is housed in a compact SC-74, SOT-457 (6-TSOP) surface-mount package, requiring a smaller PCB area compared to conventional transistors. It is suitable for applications such as high-voltage DC-to-DC conversion, MOSFET gate driving, motor control, and power switches.

 

Key electrical characteristics include a minimum DC current gain of 345 at 500mA and 2V, and a maximum Vce saturation of 515mV at 600mA and 6A. The operating temperature range is up to 150°C (TJ).

PBSS303ND,115 Quick Information

Product Type: Transistor
Canonical Name: NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Subcategory: Single

PBSS303ND,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS303ND,115 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS303ND,115 Features

  • NPN low VCEsat BISS transistor
  • 60V collector-emitter voltage
  • 1A continuous collector current
  • 140MHz typical frequency
  • SC-74, SOT-457 surface-mount package

PBSS303ND,115 Applications

  • High-voltage DC-to-DC conversion
  • High-voltage MOSFET gate driving
  • High-voltage motor control
  • High-voltage power switches
  • TFT backlight inverter applications

PBSS303ND,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the PBSS303ND,115?

The collector-emitter voltage is 60V.

What package does the PBSS303ND,115 come in?

It comes in a 6TSOP (SOT-457) surface mount package.

What is the maximum collector current for this transistor?

The maximum collector current is 1A.

What is the operating temperature range of the PBSS303ND,115?

It operates up to 150°C.

Is the PBSS303ND,115 RoHS compliant?

Yes, it is RoHS3 compliant.

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