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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
61,020 pcs
|
61020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Saturation Resistance | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Peak Collector Current | |
| Power | |
| Power Dissipation | |
| Supplier Device Package | |
| Supplier Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Nexperia PBSS303ND,115 is an NPN low VCEsat Breakthrough In Small Signal (BISS) transistor designed for high-voltage applications. It features a collector-emitter voltage of 60V and a continuous collector current capability of 1A, with a peak capability of 6A.
This transistor boasts a low collector-emitter saturation voltage (VCEsat) and high collector current gain (hFE) at high collector currents, contributing to high efficiency and reduced heat generation. Its typical frequency is 140MHz.
The PBSS303ND,115 is housed in a compact SC-74, SOT-457 (6-TSOP) surface-mount package, requiring a smaller PCB area compared to conventional transistors. It is suitable for applications such as high-voltage DC-to-DC conversion, MOSFET gate driving, motor control, and power switches.
Key electrical characteristics include a minimum DC current gain of 345 at 500mA and 2V, and a maximum Vce saturation of 515mV at 600mA and 6A. The operating temperature range is up to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 60V.
It comes in a 6TSOP (SOT-457) surface mount package.
The maximum collector current is 1A.
It operates up to 150°C.
Yes, it is RoHS3 compliant.