| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The PBSS302NX from Nexperia USA Inc. is an NPN bipolar junction transistor (BJT) suitable for electronic circuits requiring robust switching and amplification capabilities. This component is specified with a maximum collector current of 5.3 A and a collector-emitter breakdown voltage of 20 V.
Key electrical characteristics include a maximum power dissipation of 2.1 W and a transition frequency of 140 MHz, indicating its suitability for moderate frequency applications. The transistor exhibits a minimum DC current gain (hFE) of 250 at 2A and 2V, and a low Vce saturation of 200mV at 265mA and 5.3A.
Packaged in a surface-mount SOT-89 (TO-243AA) case, the PBSS302NX is designed for automated assembly processes. It operates at temperatures up to 150°C (TJ). The series is noted as Automotive, AEC-Q100 compliant, suggesting suitability for automotive applications requiring stringent quality and reliability standards.
Environmental compliance includes RoHS3 compliance, MSL 1 rating, and REACH unaffected status. This transistor is a reliable choice for designers needing a high-performance NPN BJT in a compact surface-mount package.
5.3 A.
20 V.
SOT-89 (TO-243AA) surface mount package.
Yes, it is part of the Automotive, AEC-Q100 series.
150 °C.
250 at 2A collector current and 2V Vce.
140 MHz.