PBSS2515M,315 The Nexperia PBSS2515M,315 is an NPN low VCEsat transistor designed for power management and peripheral driver applications. It features a 15V rating and 500mA current capability.
Mfr Part #:

PBSS2515M,315

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBSS2515M,315 is an NPN low VCEsat transistor designed for power management and peripheral driver applications. It features a 15V rating and 500mA current capability.
Total Stock: 1,440 pcs
$ Price Range: $0.48

PBSS2515M,315 Available from 1 distributor

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PBSS2515M,315 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) - Min
Equivalent On-Resistance
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Peak Collector Current
Power
Storage Temperature
Supplier Device Package
Supplier Package
Total Power Dissipation
Transistor Type
Vce Saturation (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage

PBSS2515M,315 Description

Short technical summary and product information.

The Nexperia PBSS2515M,315 is a low VCEsat NPN transistor in an ultra-small SOT-883 plastic package. It is rated for a collector-emitter voltage of 15V and a continuous collector current of 500mA, with a peak collector current of 1A.

 

This transistor offers high efficiency, reduced heat generation, and smaller printed-circuit board requirements. Its low collector-emitter saturation voltage (VCEsat) makes it suitable for various power management applications, including DC-DC converters, supply line switching, battery chargers, and LCD backlighting. It also serves as a peripheral driver for low voltage applications like lamps, LEDs, relays, buzzers, and motors.

 

Key electrical characteristics include a DC current gain (hFE) of 150 at 100mA and 2V, and a maximum Vce saturation of 250mV at 50mA and 500mA. The device operates at frequencies up to 420MHz. The maximum power dissipation is 430mW at 25°C ambient temperature (with specific mounting conditions), and it can operate up to a junction temperature of 150°C.

 

The PBSS2515M,315 is supplied in a surface mount SOT-883 package. Reflow soldering is the recommended assembly method.

PBSS2515M,315 Quick Information

Product Type: NPN Transistor
Canonical Name: PBSS2515M,315 NPN Low VCEsat Transistor
Subcategory: Single

PBSS2515M,315 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBSS2515M,315 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBSS2515M,315 Features

  • Low collector-emitter saturation voltage.
  • High collector current capability.
  • High efficiency reduces heat generation.
  • Ultra-small SOT-883 plastic package.
  • Suitable for power management applications.

PBSS2515M,315 Applications

  • Used in DC-DC converters.
  • Ideal for supply line switching.
  • Applicable for battery chargers.
  • Powers LCD backlighting.
  • Drives inductive loads like relays.

PBSS2515M,315 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The collector-emitter voltage (VCEO) is 15V.

What is the maximum continuous collector current?

The maximum continuous collector current (IC) is 500mA.

What is the package type?

The package is SOT-883.

What is the operating temperature range?

The operating ambient temperature is up to 150°C.

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