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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature (Tamb) | |
| Current | |
| Current Gain (Minimum @ 100 mA, 10 V) | |
| Current Gain (Minimum/Typical @ VCE = 10 V; IC = 50 mA; Tamb = 25 °C) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction Temperature (TJ) | |
| Mounting Type | |
| Operating Temperature | |
| Operating Temperature (TJ) | |
| Power | |
| Power Dissipation (Maximum @ Tamb ≤ 25 °C [1]) | |
| Power Dissipation (Maximum @ Tamb ≤ 25 °C [2]) | |
| Power Dissipation (Maximum) | |
| Storage Temperature (Tstg) | |
| Supplier Device Package | |
| Supplier Package | |
| Thermal Resistance (Typical @ in free air [1]) | |
| Thermal Resistance (Typical @ in free air [2]) | |
| Thermal Resistance (Typical) | |
| Transistor Type | |
| Vce Saturation (Max) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| current (Maximum @ single pulse; tp ≤ 1 ms) | |
| voltage (Maximum @ open collector) | |
| voltage (Maximum @ open emitter) |
The Nexperia PBHV9115Z,115 is a PNP bipolar junction transistor designed for high-voltage applications. It features a low collector-emitter saturation voltage (VCEsat) and high collector current capability.
Key electrical specifications include a collector-emitter voltage (VCEO) of 150V and a continuous collector current (IC) of 1A. The DC current gain (hFE) is a minimum of 100 at 100mA and 10V. The transistor can dissipate up to 1.4W of power at 25°C ambient temperature.
This device is housed in a SOT-223 (SC-73) medium power surface-mounted device (SMD) plastic package. Its high voltage capability and low saturation voltage make it suitable for applications such as LED drivers for LED chain modules, LCD backlighting, and high-intensity discharge (HID) front lighting.
Additional features include a frequency rating of 115MHz and a junction temperature up to 150°C. The NPN complement is PBHV8115Z.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) for the PBHV9115Z,115 is -150 V.
The maximum continuous collector current (Ic) for the PBHV9115Z,115 is -1 A.
The DC current gain (hFE) of the PBHV9115Z,115 is a minimum of 100 and a typical of 220 at VCE = -10 V and IC = -50 mA.
The maximum power dissipation (Ptot) for the PBHV9115Z,115 is 1.4 W at 25°C ambient temperature (device mounted on an FR4 PCB with mounting pad for collector 6 cm2).
The operating junction temperature (Tj) for the PBHV9115Z,115 can reach up to 150°C.
The PBHV9115Z,115 is supplied in a SOT-223 surface mount package.