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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,336,020 pcs
|
1336020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
40,000 pcs
|
40000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Collector Current | |
| Collector-Base Voltage | |
| Collector-Emitter Peak Voltage | |
| Collector-Emitter Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Typical @ VCE = 10 V; IC = 50 mA; Tamb = 25 °C) | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Peak Base Current | |
| Peak Collector Current | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Total Power Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Nexperia PBHV8540T is an NPN high-voltage, low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mount plastic package. This component is engineered for applications requiring high voltage handling, featuring a collector-emitter voltage of up to 400V and a continuous collector current of 0.5A.
Key electrical characteristics include a low collector-emitter saturation voltage (VCEsat) and high collector current gain (hFE) at significant collector currents. The transistor is rated for a maximum power dissipation of 300 mW at 25°C ambient temperature and operates within a junction temperature range of -55°C to 150°C.
Its robust design and specifications make it suitable for various applications such as electronic ballasts for fluorescent lighting, LED drivers, LCD backlighting, automotive motor management, and Switch Mode Power Supplies (SMPS). The SOT23 package ensures a small footprint for space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PBHV8540T is 400 V.
The continuous collector current (IC) rating for the PBHV8540T is 0.5 A.
The typical DC current gain (hFE) is between 100 and 200 when VCE is 10 V and IC is 50 mA at 25°C.
The PBHV8540T is available in a SOT23 package.
The operating temperature (TJ) for this transistor is up to 150°C.
The total power dissipation (Ptot) is a maximum of 300 mW at an ambient temperature of 25°C.