PBHV8540T,215 The Nexperia PBHV8540T is an NPN high-voltage transistor designed for demanding applications. It offers a 400V collector-emitter voltage and 0.5A collector current capability.
Mfr Part #:

PBHV8540T,215

Available from 2 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBHV8540T is an NPN high-voltage transistor designed for demanding applications. It offers a 400V collector-emitter voltage and 0.5A collector current capability.
Total Stock: 1,376,020 pcs
$ Price Range: $0.48

PBHV8540T,215 Available from 2 distributors

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,336,020 pcs
1336020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
40,000 pcs
40000 pcs On Request 1 On Request On Request On Request On Request On Request

PBHV8540T,215 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature
Collector Current
Collector-Base Voltage
Collector-Emitter Peak Voltage
Collector-Emitter Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain Hfe (Typical @ VCE = 10 V; IC = 50 mA; Tamb = 25 °C)
Emitter-Base Voltage
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Peak Base Current
Peak Collector Current
Power
Storage Temperature
Supplier Device Package
Total Power Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBHV8540T,215 Description

Short technical summary and product information.

The Nexperia PBHV8540T is an NPN high-voltage, low VCEsat transistor housed in a compact SOT23 (TO-236AB) surface-mount plastic package. This component is engineered for applications requiring high voltage handling, featuring a collector-emitter voltage of up to 400V and a continuous collector current of 0.5A.

 

Key electrical characteristics include a low collector-emitter saturation voltage (VCEsat) and high collector current gain (hFE) at significant collector currents. The transistor is rated for a maximum power dissipation of 300 mW at 25°C ambient temperature and operates within a junction temperature range of -55°C to 150°C.

 

Its robust design and specifications make it suitable for various applications such as electronic ballasts for fluorescent lighting, LED drivers, LCD backlighting, automotive motor management, and Switch Mode Power Supplies (SMPS). The SOT23 package ensures a small footprint for space-constrained designs.

PBHV8540T,215 Quick Information

Product Type: Transistor
Canonical Name: PBHV8540T NPN High-Voltage Low VCEsat Transistor
Subcategory: Single

PBHV8540T,215 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBHV8540T,215 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBHV8540T,215 Features

  • NPN high-voltage transistor.
  • Low collector-emitter saturation voltage.
  • High collector current capability.
  • Compact SOT23 surface-mount package.
  • Suitable for high voltage applications.

PBHV8540T,215 Applications

  • Used in electronic ballast lighting.
  • Ideal for LED driver modules.
  • Applicable for LCD backlighting.
  • Suitable for automotive motor management.
  • Used in Switch Mode Power Supplies.

PBHV8540T,215 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PBHV8540T?

The maximum collector-emitter voltage (VCEO) for the PBHV8540T is 400 V.

What is the continuous collector current rating?

The continuous collector current (IC) rating for the PBHV8540T is 0.5 A.

What is the typical DC current gain (hFE) at specified conditions?

The typical DC current gain (hFE) is between 100 and 200 when VCE is 10 V and IC is 50 mA at 25°C.

What is the package type for the PBHV8540T transistor?

The PBHV8540T is available in a SOT23 package.

What is the operating temperature range?

The operating temperature (TJ) for this transistor is up to 150°C.

What is the maximum power dissipation?

The total power dissipation (Ptot) is a maximum of 300 mW at an ambient temperature of 25°C.

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