PBHV8215Z,115 The Nexperia PBHV8215Z,115 is an NPN high-voltage, low VCEsat transistor in a SOT-223 package. It offers a 150V collector-emitter voltage and 2A collector current capability.
Mfr Part #:

PBHV8215Z,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBHV8215Z,115 is an NPN high-voltage, low VCEsat transistor in a SOT-223 package. It offers a 150V collector-emitter voltage and 2A collector current capability.
✓ Total Stock: 30 pcs
$ Price Range: $0.48

PBHV8215Z,115 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30 pcs
30 pcs On Request 1 On Request On Request 2306 On Request On Request

PBHV8215Z,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBHV8215Z,115 Description

Short technical summary and product information.

The Nexperia PBHV8215Z,115 is an NPN high-voltage, low VCEsat transistor designed for demanding applications. It is housed in a medium power SOT-223 (SC-73) surface-mounted device (SMD) plastic package.

 

Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 150V and a continuous collector current (IC) of 2A. The transistor also features a low collector-emitter saturation voltage (Vce Sat) of 280mV at 400mA/2A and a DC current gain (hFE) of 100 minimum at 1A/10V. Its frequency capability is up to 33MHz.

 

This transistor is suitable for various applications such as LED drivers for LED chain modules, LCD backlighting, automotive motor management, and switch mode power supplies (SMPS). The SOT-223 package is surface-mounted, facilitating integration into compact electronic designs.

 

Additional specifications include a maximum junction temperature of 150°C and a total power dissipation of 1.45W when mounted on a suitable PCB.

PBHV8215Z,115 Quick Information

Product Type: Transistor
Canonical Name: NPN High-Voltage Low VCEsat Transistor
Subcategory: Single

PBHV8215Z,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBHV8215Z,115 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBHV8215Z,115 Features

  • High voltage NPN transistor.
  • 150V collector-emitter voltage.
  • 2A continuous collector current.
  • Low VCEsat for efficiency.
  • SOT-223 surface-mount package.

PBHV8215Z,115 Applications

  • LED driver circuits.
  • LCD backlighting.
  • Automotive motor management.
  • Switch mode power supplies.

PBHV8215Z,115 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PBHV8215Z,115?

The maximum collector-emitter voltage (VCEO) is 150V.

What is the continuous collector current rating?

The continuous collector current (IC) is 2A.

What is the package type for this transistor?

This transistor is supplied in a SOT-223 surface-mount package.

What is the operating temperature range?

The operating temperature (TJ) is up to 150°C.

What is the DC current gain (hFE) at specified conditions?

The DC current gain (hFE) is a minimum of 100 at VCE = 10 V; IC = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C.

What is the collector-emitter saturation voltage?

The Vce Saturation is a maximum of 280mV at 400mA base current and 2A collector current.

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