| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | 2306 | On Request | On Request |
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The Nexperia PBHV8215Z,115 is an NPN high-voltage, low VCEsat transistor designed for demanding applications. It is housed in a medium power SOT-223 (SC-73) surface-mounted device (SMD) plastic package.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 150V and a continuous collector current (IC) of 2A. The transistor also features a low collector-emitter saturation voltage (Vce Sat) of 280mV at 400mA/2A and a DC current gain (hFE) of 100 minimum at 1A/10V. Its frequency capability is up to 33MHz.
This transistor is suitable for various applications such as LED drivers for LED chain modules, LCD backlighting, automotive motor management, and switch mode power supplies (SMPS). The SOT-223 package is surface-mounted, facilitating integration into compact electronic designs.
Additional specifications include a maximum junction temperature of 150°C and a total power dissipation of 1.45W when mounted on a suitable PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 150V.
The continuous collector current (IC) is 2A.
This transistor is supplied in a SOT-223 surface-mount package.
The operating temperature (TJ) is up to 150°C.
The DC current gain (hFE) is a minimum of 100 at VCE = 10 V; IC = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C.
The Vce Saturation is a maximum of 280mV at 400mA base current and 2A collector current.