PBHV8140Z,115 The Nexperia PBHV8140Z,115 is an NPN high-voltage transistor designed for demanding applications. It offers a 400V collector-emitter voltage and 1A collector current capability.
Mfr Part #:

PBHV8140Z,115

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PBHV8140Z,115 is an NPN high-voltage transistor designed for demanding applications. It offers a 400V collector-emitter voltage and 1A collector current capability.
Total Stock: 8,020 pcs
$ Price Range: $0.48

PBHV8140Z,115 Available from 1 distributor

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PBHV8140Z,115 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Ambient Temperature
Collector Current (Maximum)
Collector Emitter Peak Voltage (Maximum @ VBE = 0 V)
Collector Emitter Voltage (Maximum @ open base)
Collector-Base Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain Hfe (Minimum/Typical @ VCE = 10 V; IC = 50 mA; Tamb = 25 °C)
Emitter-Base Voltage
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Peak Base Current
Peak Collector Current
Power
Storage Temperature
Supplier Device Package
Total Power Dissipation (Maximum @ Tamb=25 °C)
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

PBHV8140Z,115 Description

Short technical summary and product information.

The Nexperia PBHV8140Z,115 is a high-voltage, low VCEsat NPN bipolar junction transistor (BJT) housed in a medium power SOT-223 surface-mounted device (SMD) plastic package. This transistor is engineered for applications requiring high voltage handling, such as LED drivers for LED chain modules, LCD backlighting, automotive motor management, and switch mode power supplies (SMPS).

 

Key electrical characteristics include a collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 1A. It also features a low collector-emitter saturation voltage (VCEsat) of 250mV at 200mA/1A and a DC current gain (hFE) of at least 35 at 500mA/10V. The transistor operates at frequencies up to 25MHz.

 

Packaged in a SOT-223 (SC-73) surface-mount package, the PBHV8140Z,115 is suitable for automated assembly processes. Its thermal capabilities include a maximum junction temperature of 150°C and a total power dissipation of up to 1.45W when mounted on a suitable PCB.

PBHV8140Z,115 Quick Information

Product Type: NPN Transistor
Canonical Name: Nexperia PBHV8140Z,115 NPN High-Voltage Low VCEsat Transistor
Subcategory: Single

PBHV8140Z,115 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PBHV8140Z,115 Estimated Pricing

Qty Low High
1+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

PBHV8140Z,115 Features

  • High voltage NPN transistor.
  • 400V collector-emitter voltage rating.
  • 1A continuous collector current.
  • Low VCEsat for efficiency.
  • SOT-223 surface-mount package.

PBHV8140Z,115 Applications

  • LED driver circuits.
  • LCD backlighting.
  • Automotive motor management.
  • Switch mode power supplies.

PBHV8140Z,115 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the PBHV8140Z,115?

The maximum collector-emitter voltage (VCEO) for the PBHV8140Z,115 is 400V.

What is the continuous collector current rating?

The continuous collector current (IC) rating for this transistor is 1A.

What package type is the PBHV8140Z,115 supplied in?

The PBHV8140Z,115 is supplied in a SOT-223 package.

What is the operating temperature range?

The operating junction temperature (TJ) for this device is up to 150°C.

What is the DC current gain (hFE) at typical conditions?

The DC current gain (hFE) is typically 155 at VCE = 10 V and IC = 50 mA at 25°C.

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