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50,000 pcs
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50000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Nexperia PBHV8115T is a single NPN bipolar junction transistor (BJT) designed for high-voltage applications. It features a maximum collector-emitter voltage of 150V and can handle a continuous collector current of 1A.
This transistor exhibits a low collector-emitter saturation voltage (VCEsat) of 0.35V maximum at 1A collector current and 10mA base current, with a typical value of 0.25V. Its DC current gain (hFE) is a minimum of 100 and typically 250 at 5V collector-emitter voltage and 1A collector current. The transition frequency (fT) is typically 150MHz under the same conditions.
The PBHV8115T is housed in a TO-220 package, suitable for through-hole mounting. This package type facilitates heat dissipation and ease of assembly in various electronic circuits.
With its high voltage capability and low saturation voltage, the PBHV8115T is suitable for power switching and amplification applications where reliability and efficiency are critical.
The maximum collector-emitter voltage is 150V.
The continuous collector current rating is 1A.
The typical collector-emitter saturation voltage is 0.25V when the collector current is 1A and the base current is 10mA.
The typical DC current gain is 250 when the collector-emitter voltage is 5V and the collector current is 1A.
The typical transition frequency is 150MHz when the collector-emitter voltage is 5V and the collector current is 1A.
The PBHV8115T is available in a TO-220 package.
The PBHV8115T is designed for through-hole mounting.