IRFR5305TRPBF
Infineon
The Infineon IRFR5305TRPBF is a single MOSFET transistor. It features RoHS3 compliance and an MSL of 1 Unlimited.
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250 pcs
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250 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The P6KE20A is a TVS diode manufactured by ON Semiconductor, designed for transient voltage suppression. It offers a peak pulse power dissipation of 600W on a 10/1000μs waveform and a steady-state power dissipation of 5W at 75℃.
Key electrical characteristics include a minimum breakdown voltage of 21V at 1mA, a maximum reverse leakage current of 1μA at 19V, and a maximum clamping voltage of 27.7V at 1A. The device exhibits a fast response time, typically less than 1.0ps from 0 Volts to VBR Min.
This TVS diode is packaged in a DO-15 plastic package with glass passivated chip junction. It is designed for through-hole mounting and can be mounted in any position. The operating junction and storage temperature range is -55℃ to +150℃.
The P6KE20A series complies with 2011/65/EU and IEC61249-2-21:2003 standards.
| Qty | Low | High |
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 21V at a test current of 1mA.
The maximum clamping voltage is 27.7V at a peak pulse current of 1A.
The maximum peak pulse current is 100A under a 10/1000μs waveform.
The maximum peak pulse power dissipation is 600W under a 10/1000μs waveform.
The P6KE20A is available in a DO-15 through-hole package.
The operating junction and storage temperature range is -55°C to +150°C.
The typical response time is less than 1.0ps from 0 volts to the breakdown voltage.
