| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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258,286 pcs
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258286 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
7,350 pcs
|
7350 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Vishay Siliconix SUD40N04-10A is a high-performance N-Channel MOSFET designed for power switching applications. It features a drain-source breakdown voltage of 40V and can handle a continuous drain current of up to 40A at 25°C, with a pulsed drain current capability of 100A.
Key electrical characteristics include a low on-state resistance, with rDS(on) as low as 0.010 Ω at VGS = 10V and 40A. The gate threshold voltage is typically 2V. Dynamic characteristics include an input capacitance (Ciss) of 1700pF and an output capacitance (Coss) of 370pF.
This MOSFET operates over a wide temperature range from -55°C to 175°C. It is packaged in a TO-252 surface-mount package, making it suitable for various electronic designs where space efficiency is important. The thermal resistance from junction to case is a typical 1.75°C/W.
With its robust specifications, the SUD40N04-10A is well-suited for applications requiring efficient power handling and switching capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 2V.
The continuous drain current at 25°C is 40A.
The typical on-state resistance is 0.010 Ohms at 10V gate-source voltage and 40A drain current.
The typical on-state resistance is 0.014 Ohms at 4.5V gate-source voltage and 10A drain current.
The operating junction and storage temperature range is -55 to 175°C.
The package type is TO-252.