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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The STMicroelectronics P30NF10 is an N-channel Power MOSFET utilizing the STripFET™ II process. This device offers a drain-source voltage (Vds) of 100V and a continuous drain current (Id) of 35A at 25°C case temperature. It boasts a low on-resistance (Rds(on)) of less than 0.045 Ohms.
Key electrical ratings include a pulsed drain current (Idm) of 140A and a total power dissipation (Ptot) of 115W at 25°C. The MOSFET also features exceptional dv/dt capability and is 100% avalanche tested, making it suitable for demanding applications.
Available in D2PAK, TO-220, and TO-220FP packages, the P30NF10 is designed for various switching applications. Its rugged avalanche characteristics and manufacturing reproducibility contribute to its reliability in circuit designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the P30NF10 is 100V.
The continuous drain current (Id) for the P30NF10 at a case temperature of 25°C is 35A.
The on-resistance (Rds(on)) of the P30NF10 is less than 0.045 Ohms when Vgs is 10V and Id is 35A.
The P30NF10 is available in D2PAK, TO-220, and TO-220FP packages.
The storage temperature range for the P30NF10 is -55°C to 175°C.