| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
121,020 pcs
|
121020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NXV65UPR is a P-Channel MOSFET manufactured by Nexperia USA Inc. It utilizes trench MOSFET technology and is packaged in a SOT-23, TO-236AB package, suitable for surface mounting. The device has a drain-to-source voltage (Vdss) of -20V and a maximum drain current (Id) of 2.1A at 25°C, with a reduced current of 1.3A at 100°C. It features a drain-source on-state resistance (Rds On) of 70 milliohms at Vgs = -4.5V and Id = -2.1A, with a typical value of 55 milliohms. The input capacitance (Ciss) is 458 pF at 10V, and the gate charge (Qg) is 8.7 nC at Vgs = 4.5V. The device operates over a temperature range from -55°C to 150°C and complies with RoHS standards. It is suitable for switching and power management applications where high efficiency and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-20 V
SOT-23
-55°C to 150°C
Yes, RoHS3 Compliant