| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
46,020 pcs
|
46020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Nexperia NX7002BKXBZ is a dual N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in a leadless ultra-small DFN1010B-6 (SOT1216) package, measuring 1.1 x 1.0 x 0.37 mm. This MOSFET offers a drain-source voltage of 60V and a continuous drain current of up to 260mA at 25°C ambient temperature. The drain-source on-state resistance is a maximum of 2.8 Ohms at 200mA and 10V gate-source voltage. It features logic-level gate compatibility and ESD protection exceeding 2 kV HBM.
This device is suitable for applications such as relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. The compact and thin package makes it ideal for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 260mA at 25°C ambient temperature.
The maximum RdsOn is 2.8 Ohms at 200mA and 10V gate-source voltage.
The NX7002BKXBZ is supplied in a DFN1010B-6 package.
The operating temperature range is -55°C to 150°C (TJ).