| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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37,020 pcs
|
37020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel | |
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The NX6008NBKWX from Nexperia USA Inc. is an N-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. This component is housed in a compact SOT323 (SC-70) surface-mounted device (SMD) plastic package.
Key electrical characteristics include a drain-source voltage of 60V, a gate-source voltage range of ±8V, and a maximum continuous drain current of 250mA at 25°C ambient temperature. The drain-source on-state resistance (RDSon) is a maximum of 2.8Ω at 300mA and 4.5V Vgs. It also features a low threshold voltage and very fast switching capabilities.
This MOSFET is suitable for various applications such as relay drivers, high-speed line drivers, low-side load switches, and general switching circuits. It offers ElectroStatic Discharge (ESD) protection exceeding 2 kV HBM.
The device operates within a temperature range of -55°C to 150°C (TJ) and has a total power dissipation of 270mW (Ta). The package is surface-mounted, with the SOT-323 (SC-70) being the supplier device package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage of the NX6008NBKWX is 60V.
The NX6008NBKWX is available in the SC-70 and SOT-323 package types.
The operating temperature range for the NX6008NBKWX is -55°C to 150°C.
The maximum Rds On for the NX6008NBKWX is 2.8 Ohms at 300mA and 4.5V Vgs.
The continuous drain current of the NX6008NBKWX is 250mA at 25°C ambient temperature.