| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
21,020 pcs
|
21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
37 pcs
|
37 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| ESD Protection | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Nexperia NX3008CBKV,115 is a complementary N/P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in an ultra-small and flat lead SOT666 surface-mounted device (SMD) plastic package.
Key electrical specifications include a drain-source voltage of 30V for the N-channel and -30V for the P-channel. The N-channel offers a maximum drain current of 400mA at VGS = 4.5V and Tamb = 25°C, with a typical drain-source on-state resistance of 1Ω at ID = 350mA. The P-channel provides a maximum drain current of -220mA at VGS = -4.5V and Tamb = 25°C, with a typical drain-source on-state resistance of 2.8Ω at ID = -200mA.
This MOSFET features a low threshold voltage, very fast switching, and ESD protection up to 2 kV. It is suitable for applications such as level shifting, power supply converters, load switches, and general switching circuits. The device operates within a temperature range of -55°C to 150°C (TJ).
The SOT-666 package has 6 leads with a 0.5mm pitch and a body size of 1.6mm x 1.2mm x 0.55mm. It is designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage is 30V for the N-channel and -30V for the P-channel.
The N-channel has a maximum drain current of 400mA, and the P-channel has a maximum drain current of -220mA.
The typical drain-source on-state resistance is 1Ω for the N-channel at 350mA and 2.8Ω for the P-channel at -200mA.
The operating temperature range is -55°C to 150°C (TJ).
This MOSFET is supplied in a SOT-666 package.