| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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60,000 pcs
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60000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,646 pcs
|
1646 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NVTFS4823NTWG is a single N-channel Power MOSFET manufactured by On Semiconductor. It is designed for applications requiring efficient power switching, featuring a maximum drain-to-source voltage of 30V and a continuous drain current of up to 30A at 25°C case temperature.
Key electrical characteristics include a low on-resistance, with a maximum of 10.5 mΩ at 10V gate-to-source voltage, minimizing conduction losses. The device also boasts low capacitance, contributing to reduced driver losses. Its pulsed drain current capability reaches up to 198A for short durations.
This MOSFET is housed in a small footprint WDFN8 package measuring 3.3x3.3 mm, making it suitable for compact designs. It operates across a wide temperature range from -55°C to 175°C junction temperature. The device is AEC-Q101 qualified and PPAP capable, indicating its suitability for automotive applications. It is also Pb-free and RoHS compliant.
Thermal management is supported by a junction-to-mounting board thermal resistance of 7.0 °C/W and a junction-to-ambient thermal resistance of 47 °C/W when mounted on a standard FR4 board.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The continuous drain current is 30A at 25°C case temperature and 13A at 25°C ambient temperature.
The maximum on-resistance is 10.5 mΩ at 10V gate-to-source voltage.
The operating junction and storage temperature range is -55°C to 175°C.
It is supplied in a WDFN8 package.
Yes, it is RoHS3 Compliant.
Yes, the NVTFS4823NTWG is AEC-Q101 Qualified.