| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
118,020 pcs
|
118020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
180 pcs
|
180 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NVR1P02T1G is a P-Channel MOSFET designed by On Semiconductor for power management applications in portable and battery-powered products. It offers ultra low on-resistance, providing higher efficiency and extending battery life. Key electrical characteristics include a drain-to-source voltage of -20V and a continuous drain current of 1A at 25°C.
The MOSFET exhibits a maximum on-resistance of 180mOhm at a gate-to-source voltage of -10V and a drain current of -1.5A. It also features a gate-to-source voltage range of ±20V and a gate threshold voltage of -2.3V maximum at 250µA. The device operates within a temperature range of -55°C to 150°C.
Packaged in a miniature SOT-23 surface mount package, the NVR1P02T1G saves board space. This package is suitable for automated assembly processes. The device is RoHS compliant and Pb-Free, making it suitable for environmentally conscious designs.
Applications for this MOSFET include DC-DC converters, computers, printers, PCMCIA cards, and cellular telephones. Its robust design and compact form factor make it a versatile component for various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the NVR1P02T1G is -20V.
The NVR1P02T1G has a continuous drain current rating of 1A at 25°C.
The typical on-resistance (Rds On) for the NVR1P02T1G is 180mOhm at a drain current of 1.5A and a gate-to-source voltage of 10V.
The NVR1P02T1G MOSFET operates within a temperature range of -55°C to 150°C.
The NVR1P02T1G MOSFET is supplied in a SOT-23-3 (TO-236) surface mount package.
Yes, the NVR1P02T1G is RoHS3 Compliant.