| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
308,000 pcs
|
308000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
49,020 pcs
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49020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,397 pcs
|
1397 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
277 pcs
|
277 pcs | On Request | 1 | On Request | On Request | 1229+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Power Dissipation | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTZD3155CT1G from ON Semiconductor is a complementary MOSFET designed for various applications requiring efficient switching. This device features N-channel and P-channel MOSFETs integrated into a single SOT-563 package, making it suitable for space-constrained designs.
Key electrical characteristics include a drain-to-source voltage of 20V for the N-channel and -20V for the P-channel. The N-channel MOSFET can handle a continuous drain current of 540mA at 25°C, while the P-channel can handle -430mA. The on-resistance (RDS(on)) is specified as low as 550mOhm at 540mA, 4.5V for the N-channel and 0.5 Ohm at -4.5V for the P-channel, ensuring high efficiency.
This MOSFET utilizes trench technology for enhanced performance and includes ESD protection on the gate. It operates over a wide temperature range of -55°C to 150°C. The small footprint of the SOT-563 package (1.6 x 1.6 mm) and surface mount capability make it ideal for integration into compact electronic devices.
Applications for the NTZD3155CT1G include DC-DC conversion circuits, load/power switching with level shifting, and battery-operated systems such as cell phones, MP3 players, digital cameras, and PDAs. Its complementary nature simplifies design for applications requiring both positive and negative channel control.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 20V for the N-channel and -20V for the P-channel.
The N-channel continuous drain current is 540mA at 25°C, and the P-channel is -430mA at 25°C.
The typical RDS(on) is 0.4 Ohm at 4.5V for the N-channel and 0.5 Ohm at -4.5V for the P-channel.
The operating junction and storage temperature range is -55°C to 150°C.
The device is supplied in a SOT-563 package.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
