NTZD3155CT5G The On Semiconductor NTZD3155CT5G is a complementary N-channel and P-channel MOSFET in a SOT-563 package. It offers a 20V drain-source voltage and handles 540mA for N-channel and 430mA for P-channel.
Mfr Part #:

NTZD3155CT5G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTZD3155CT5G is a complementary N-channel and P-channel MOSFET in a SOT-563 package. It offers a 20V drain-source voltage and handles 540mA for N-channel and 430mA for P-channel.
✓ Total Stock: 308,000 pcs
$ Price Range: $0.99

NTZD3155CT5G Available from 1 distributor

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NTZD3155CT5G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Power Dissipation
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NTZD3155CT5G Description

Short technical summary and product information.

The NTZD3155CT5G from On Semiconductor is a complementary MOSFET featuring both N-channel and P-channel transistors in a single SOT-563 package. This device is designed with trench technology for low RDS(on) performance, offering high efficiency for DC-DC conversion and load switching applications.

 

Key electrical specifications include a drain-to-source voltage of 20V for the N-channel and -20V for the P-channel. The continuous drain current is rated at 540mA for the N-channel and -430mA for the P-channel at 25°C. The Rds(on) is as low as 0.4 Ohms at 4.5V for the N-channel and 0.5 Ohms at -4.5V for the P-channel. It also features a low threshold voltage and ESD protected gate.

 

This MOSFET is suitable for applications such as DC-DC conversion circuits, load/power switching with level shift, and battery-operated systems like cell phones and PDAs. The small footprint of the SOT-563 package (1.6 x 1.6 mm) makes it ideal for space-constrained designs. The device operates over a wide temperature range of -55°C to 150°C.

NTZD3155CT5G Quick Information

Product Type: MOSFET
Canonical Name: NTZD3155CT5G Complementary MOSFET with ESD Protection
Subcategory: Complementary

NTZD3155CT5G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTZD3155CT5G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTZD3155CT5G Features

  • Complementary N and P-channel MOSFET.
  • 20V drain-to-source voltage rating.
  • Low RDS(on) performance.
  • Small SOT-563 footprint.
  • ESD protected gate.

NTZD3155CT5G Applications

  • DC-DC conversion circuits.
  • Load and power switching.
  • Level shift applications.
  • Battery operated systems.
  • High speed circuits.

NTZD3155CT5G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTZD3155CT5G?

The drain-to-source voltage is 20V for the N-channel and -20V for the P-channel.

What is the continuous drain current for the NTZD3155CT5G?

The continuous drain current is 540mA for the N-channel and -430mA for the P-channel at 25°C.

What is the package type for the NTZD3155CT5G?

The package type is SOT-563.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

Is the NTZD3155CT5G RoHS compliant?

Yes, the NTZD3155CT5G is RoHS3 compliant.

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