BSS84Q-7-F
Diodes Incorporated
The BSS84Q-7-F is a 50V P-Channel enhancement-mode MOSFET from Diodes Incorporated. It features 130mA drain current, 10 Ohm on-resistance, and a SOT-23-3 package.
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392,000 pcs
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392000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTNS3A92PZT5G from On Semiconductor is a single P-Channel MOSFET designed for various electronic applications. This component offers a breakdown voltage of -20V and can handle a continuous drain current of -223mA at 25°C. The on-resistance is specified at a maximum of 1.6 Ohms.
This MOSFET is housed in an XLLGA3 surface mount package. Its specifications make it suitable for general-purpose switching and amplification tasks where a P-Channel device is required.
Key electrical characteristics include a maximum breakdown voltage of -20V and a maximum continuous drain current of -223mA. The maximum on-resistance is 1.6 Ohms, indicating efficient power handling for its class.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is -20V.
The continuous drain current is -223mA at 25°C.
The maximum on-resistance is 1.6 Ohm.
It is a single P-Channel MOSFET.
The component is in an XLLGA3 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is Level 1.